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| 型号： | LT3585EDDB-3 |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 稳压器 |
| 英文描述： | 1.85 A BATTERY CHARGE CONTROLLER, PDSO10 |
| 封装： | 3 X 2 MM, PLASTIC, MO-229WECD-1, DFN-10 |
| 文件页数： | 6/20页 |
| 文件大小： | 415K |
| 代理商： | LT3585EDDB-3 |
LT3585-0/LT3585-1
LT3585-2/LT3585-3
14
3585f
Table 4. Recommended IGBTs
PART
DRIVE VOLTAGE (V)
BREAKDOWN VOLTAGE (V)
COLLECTOR CURRENT
(PULSED) (A)
VENDOR
CY25CAH-8F*
CY25CAJ-8F*
CY25BAH-8F
CY25BAJ-8F
2.5
4
2.5
4
400
150
Renesas
(408) 382-7500
www.renesas.com
GT8G133
4
400
150
Toshiba Semiconductor
(949) 623-2900
www.semicon.toshiba.co.jp/eng
*Packaged in 8-lead VSON-8 pacakge.
APPLICATIO S I FOR ATIO
WU
UU
Figure 8. Complete Xenon Circuit
EMITTER
3585 F09
GATE
Figure 9. IGBT Gate
is 5V and IGBTIN is driven by a 5V signal. The typical
90% to 10% fall time is 125ns but varies with RPD given
by Figure 7. The IGBT driver pulls a peak of 50mA when
driving an IGBT with minimal quiescent current. In the
low state, an active pull-down network is used during the
initial transition but is deactivated after an internal time
constant. This allows the IGBT driver’s quiescent current
to drop to approximately 0.1A during idle conditions.
The pull-down circuit will clamp the output below 0.8V for
currents not exceeding 10mA in its idle state. The pull-up
network is always active when the IGBTIN is greater than
1.5V. Table 4 is a list of recommended IGBT devices for
strobe applications. These devices are all packaged in
8-lead TSSOP packages unless otherwise noted.
A
C
+
DONE
CHRG/IADJ
VIN
IGBTPWR
IGBTIN
IGBTPU
IGBTPD
VBAT
SW
GND
LT3585-0
320V
DANGER HIGH VOLTAGE! OPERATION BY HIGH VOLTAGE TRAINED PERSONNEL ONLY
TO GATE OF IGBT
3585 F08
C2
50
mF
PHOTOFLASH
CAPACITOR
C3
0.22
mF
C1
4.7
mF
VIN
5V
VBAT
2 AA OR
1 TO 2 Li-Ion
D1
1
2
4
5
T1
1:10:2
RPD
20
W TO 160W
C4
2.2
mF
600V
R1
1M
FLASHLAMP
TRIGGER T
1
2
3
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