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参数资料
| 型号： | LT3782AEFE#TR |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, PDSO28 |
| 封装： | 4.40 MM, PLASTIC, TSSOP-28 |
| 文件页数： | 4/20页 |
| 文件大小： | 233K |
| 代理商： | LT3782AEFE#TR |
LT3782A
12
3782af
The gate drive voltage is set by the 10V GBIAS regulator.
Consequently, 10V rated MOSFETs are required in most
high voltage LT3782A applications.
Pay close attention to the BVDSS specications for the
MOSFETs relative to the maximum actual switch voltage
in the application. The switch node can ring during the
turn-off of the MOSFET due to layout parasitics. Check the
switching waveforms of the MOSFET directly across the
drain and source terminals using the actual PC board layout
(not just on a lab breadboard!) for excessive ringing.
Calculating Power MOSFET Switching and Conduction
Losses and Junction Temperatures
In order to calculate the junction temperature of the power
MOSFET, the power dissipated by the device must be known.
This power dissipation is a function of the duty cycle, the
load current and the junction temperature itself (due to
the positive temperature coefcient of its RDS(ON)). As a
result, some iterative calculation is normally required to
determine a reasonably accurate value. Care should be
taken to ensure that the converter is capable of delivering
the required load current over all operating conditions (line
voltage and temperature), and for the worst-case speci-
cations for VSENSE(MAX) and the RDS(ON) of the MOSFET
listed in the manufacturer’s data sheet.
The power dissipated by the MOSFET in a 2-phase boost
converter is:
PFET =
IO(MAX)
2
1– D
(
)
2
RDS(ON) D T
+k VO
2
IO(MAX)
2
1– D
(
)
CRSS f
The rst term in the equation above represents the I2R
losses in the device, and the second term, the switching
losses. The constant, k = 1.7, is an empirical factor inversely
related to the gate drive current and has the dimension
of 1/current. The ρT term accounts for the temperature
coefcient of the RDS(ON) of the MOSFET, which is typically
0.4%/°C. Figure 4 illustrates the variation of normalized
RDS(ON) over temperature for a typical power MOSFET.
JUNCTION TEMPERATURE (°C)
–50
ρ
TNORMALIZED
ON
RESISTANCE
1.0
1.5
150
3782A F04
0.5
0
50
100
2.0
Figure 4. Normalized RDS(ON) vs Temperature
APPLICATIONS INFORMATION
相关PDF资料 |
PDF描述 |
|---|---|
| LT3782AEFE | SWITCHING CONTROLLER, PDSO28 |
| LT3782AEUFD | SWITCHING CONTROLLER, PQCC28 |
| LT4356CMS-1#TR | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10 |
| LT4356CDE-2#TR | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO12 |
| LT4356IDE-1#TR | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO12 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LT3782AEFE-TRPBF | 制造商:LINER 制造商全称:Linear Technology 功能描述:2-Phase Step-Up DC/DC Controller |
| LT3782AEUFD | 制造商:LINER 制造商全称:Linear Technology 功能描述:2-Phase Step-Up DC/DC Controller |
| LT3782AEUFD#PBF | 功能描述:IC REG CTRLR BST PWM CM 28-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,000 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:1MHz 占空比:50% 电源电压:9 V ~ 10 V 降压:无 升压:是 回扫:是 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 包装:带卷 (TR) |
| LT3782AEUFD#TRPBF | 功能描述:IC REG CTRLR BST PWM CM 28-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LT3782AEUFD-PBF | 制造商:LINER 制造商全称:Linear Technology 功能描述:2-Phase Step-Up DC/DC Controller |
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