参数资料
型号: LT3782AEFE
厂商: LINEAR TECHNOLOGY CORP
元件分类: 稳压器
英文描述: SWITCHING CONTROLLER, PDSO28
封装: 4.40 MM, PLASTIC, TSSOP-28
文件页数: 3/20页
文件大小: 233K
代理商: LT3782AEFE
LT3782A
11
3782af
The Peak and Average Input Currents
The control circuit in the LT3782A measures the input cur-
rent by using a sense resistor in each MOSFET source, so
the output current needs to be reected back to the input
in order to dimension the power MOSFET properly. Based
on the fact that, ideally, the output power is equal to the
input power, the maximum average input current is:
I
IN(MAX) =
I
O(MAX)
1– D
MAX
The peak current is:
I
IN(PEAK) = 1.2
I
O(MAX)
1– D
MAX
The maximum duty cycle, DMAX, should be calculated at
minimum VIN.
Power Inductor Selection
In a boost circuit, a power inductor should be designed
to carry the maximum input DC current. The inductance
should be small enough to generate enough ripple current
to provide adequate signal to noise ratio to the LT3782A.
An empirical starting of the inductor ripple current (per
phase) is about 40% of maximum DC current, which is
half of the input DC current in a 2-phase circuit:
ΔIL 40%
I
OUT(MAX) VOUT
2V
IN
= 20%
I
OUT(MAX) VOUT
V
IN
where VIN, VOUT and IOUT are the DC input voltage, output
voltage and output current, respectively.
And the inductance is estimated to be:
L =
V
IN D
f
s ΔIL
where fs is the switching frequency per phase.
The saturation current level of inductor is estimated to
be:
I
SAT
ΔIL
2
+
I
IN
2
70%
I
OUT(MAX) VOUT
V
IN(MIN)
Sense Resistor Selection
During the switch on-time, the control circuit limits the
maximum voltage drop across the sense resistor to about
63mV. The peak inductor current is therefore limited to
63mV/R. The relationship between the maximum load
current, duty cycle and the sense resistor RSENSE is:
R ≤ VSENSE(MAX)
1– D
MAX
1.2
I
O(MAX)
2
Power MOSFET Selection
Important parameters for the power MOSFET include the
drain-to-source breakdown voltage (BVDSS), the threshold
voltage (VGS(TH)), the on-resistance (RDS(ON)) versus gate-
to-source voltage, the gate-to-source and gate-to-drain
charges (QGS and QGD, respectively), the maximum drain
current (ID(MAX)) and the MOSFET’s thermal resistances
(RTH(JC) and RTH(JA)).
APPLICATIONS INFORMATION
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