参数资料
型号: LT4351CMS#TRPBF
厂商: Linear Technology
文件页数: 14/20页
文件大小: 0K
描述: IC CTRLR MOSFET DIODE-OR 10MSOP
标准包装: 2,500
应用: 并行/冗余电源
FET 型: N 沟道
输出数: 1
内部开关:
延迟时间 - 关闭: 600ns
电源电压: 1.2 V ~ 18 V
电流 - 电源: 1.4mA
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-MSOP
包装: 带卷 (TR)
LT4351
APPLICATIONS INFORMATION
ORing Disparate Supplies
The LT4351 provides an easy solution for connecting
together different types of power sources. Again, because
of the low forward drop, the efficiency of the system is
improved and the voltage transition between supplies is
more accurate. In addition, the undervoltage and overvolt-
age features of the LT4351 provide options for enabling
and disabling the supplies that are not available from a
common diode. Figure 10 shows some examples of con-
necting disparate supplies.
Once V IN is greater than 1.2V and V DD is up, the part then
operates normally. The UV and OV pins will control the
enabling of the gate driver and once enabled, the V IN to
OUT voltage controls MOSFET turn on.
If V DD is still being charged when the gate driver turns
on the MOSFET, the GATE pin tracks with the V DD in-
crease until it reaches either the gate clamp voltage or
the compliance of the gate driver. If V DD is present with-
out V IN or OUT, the GATE pin actively sinks low.
Power Dissipation
Isolated System Supply
from Wall Adapter
WALL
ADAPTER
LT4351
SYSTEM
SUPPLY
LOAD
Isolated Battery Backup
WALL
ADAPTER
LT4351
+
BATTERY
LOAD
The internal power dissipation of the LT4351 is comprised
of the following four major components: DC power dis-
sipation from V IN , DC power dissipation from V DD , the
dissipation in the boost switch including the base drive, and
dynamic power dissipation due to current used to charge
and discharge the MOSFETs. The DC components are:
P DCVIN = I VIN ? V IN
P DCVDD = I VDD ? V DD
Three Source ORing Provides Protection
Against Out of Range Supplies
LT4351
WALL
ADAPTER
Figure 11 shows the internal dissipation of the boost
regulator as a function of V IN and inductor value. Figure
11 represents the worst-case condition with the regulator
on all the time, which does not occur in normal practice.
0.30
LT4351
LT4351
BATTERY
+
LOAD
SYSTEM
SUPPLY
0.25
L = 10μH
Figure 10
4351 F10
0.20
L = 4.7μH
0.15
Start-Up Considerations
There is no inherent shutdown in the part. As V IN ramps
up, the boost regulator starts at about 0.85V and becomes
fully operational by 1.1V. The undervoltage and overvolt-
age comparators become accurate by 1.2V. The gate drive
amplifier keeps GATE low during this period with either
a passive pull-down, a weak active pull-down if OUT is
greater than 0.8V or with the full gate drive sink if V DD is
above 2.2V.
0.10
0
5 10 15
V IN (V)
Figure 11. P BOOST(MAX)
20
4351 F11
4351fd
14
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相关代理商/技术参数
参数描述
LT4351IMS 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份,工业/汽车,大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.154",3.90mm 宽) 供应商设备封装:16-SOIC N 包装:带卷 (TR)
LT4351IMS#PBF 功能描述:IC CTLR MOSFET DIODE-OR 10MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份,工业/汽车,大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.154",3.90mm 宽) 供应商设备封装:16-SOIC N 包装:带卷 (TR)
LT4351IMS#TR 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份,工业/汽车,大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.154",3.90mm 宽) 供应商设备封装:16-SOIC N 包装:带卷 (TR)
LT4351IMS#TRPBF 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份,工业/汽车,大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.154",3.90mm 宽) 供应商设备封装:16-SOIC N 包装:带卷 (TR)
LT4352 制造商:LINER 制造商全称:Linear Technology 功能描述:High Voltage Surge