参数资料
型号: LT4356MPS-2
厂商: LINEAR TECHNOLOGY CORP
元件分类: 模拟信号调理
英文描述: SPECIALTY ANALOG CIRCUIT, PDSO16
封装: 0.150 INCH, PLASTIC, SOP-16
文件页数: 7/24页
文件大小: 214K
代理商: LT4356MPS-2
LT4356MP-1/LT4356MP-2
15
4356mp12fa
Figure 7. Overvoltage Regulator with N-channel MOSFET
Reverse Input Protection
APPLICATIONS INFORMATION
Shutdown
The LT4356 can be shut down to a low current mode when
the voltage at the SHDN pin goes below the shutdown
threshold of 0.6V. The quiescent current drops to 7μA for
the LT4356-1 and 60μA for the LT4356-2 which leaves the
auxiliary amplier on.
The SHDN pin can be pulled up to VCC or below GND by
up to 60V without damaging the pin. Leaving the pin open
allows an internal current source to pull it up and turn
on the part while clamping the pin to 2.5V. The leakage
current at the pin should be limited to no more than 1μA
if no pull-up device is used to help turn it on.
Supply Transient Protection
The LT4356 is guaranteed to be safe from damage with
supply voltages up to 100V. Nevertheless, voltage tran-
sients above 100V may cause permanent damage. During
a short-circuit condition, the large change in current owing
through power supply traces and associated wiring can
cause inductive voltage transients which could exceed
100V. To minimize the voltage transients, the power trace
parasitic inductance should be minimized by using wide
traces. A small surge suppressor, D2, in Figure 9, at the
input will clamp the voltage spikes.
Figure 8. Overvoltage Regulator with P-channel MOSFET
Reverse Input Protection
Figure 9. Overvoltage Regulator with Low-Battery Detection
CTMR
0.1μF
RSNS
10mΩ
Q1
IRLR2908
Q2
IRLR2908
VIN
12V
VOUT
12V, 3A
CLAMPED
AT 16V
4356 F07
LT4356S
GND
TMR
10
1
OUT
SNS
3
5
SHDN
7
AOUT
11
IN+
12
VCC
6
EN
FLT
FB
9
8
2
D2*
SMAJ58CA
R2
4.99k
R1
59k
GATE
4
R7
10k
R5
1M
Q3
2N3904
D1
1N4148
R3
10Ω
R4
10Ω
*DIODES INC.
CTMR
47nF
*SANYO 25CE22GA
R3
10Ω
RSNS
10mΩ
Q1
IRLR2908
D2
SMAJ58A
VIN
4356 F09
LT4356S
GND
TMR
OUT
GATE
SNS
IN+
SHDN
AOUT
FAULT
EN
FLT
UNDERVOLTAGE
FB
CL*
22μF
DC-DC
CONVERTER
GND
SHDN
VCC
R2
4.99k
R4
383k
R5
100k
R1
59k
10
1
3
4
5
7
12
VCC
6
11
2
9
8
CTMR
0.1μF
RSNS
10mΩ
Q1
IRLR2908
Q2
Si4435
VIN
12V
VOUT
12V, 3A
CLAMPED
AT 16V
4356 F08
LT4356S
GND
TMR
10
1
OUT
SNS
3
5
SHDN
7
AOUT
11
IN+
12
VCC
6
EN
FLT
FB
9
8
2
R2
4.99k
R1
59k
GATE
4
R6
10k
D1
1N5245
15V
R3
10Ω
D2*
SMAJ58CA
*DIODES INC.
相关PDF资料
PDF描述
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