参数资料
型号: LT6202HS5#TRMPBF
厂商: Linear Technology
文件页数: 13/28页
文件大小: 0K
描述: IC OP AMP RRIO 100MHZ TSOT23-5
标准包装: 500
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 25 V/µs
增益带宽积: 100MHz
电流 - 输入偏压: 3.8µA
电压 - 输入偏移: 2600µV
电流 - 电源: 2.8mA
电流 - 输出 / 通道: 40mA
电压 - 电源,单路/双路(±): 2.5 V ~ 12.6 V,±1.25 V ~ 6.3 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: SOT-23-5 细型,TSOT-23-5
供应商设备封装: TSOT-23-5
包装: 带卷 (TR)
配用: DC1813A-E-ND - BOARD SAR ADC LTC2369-18
DC1813A-A-ND - BOARD SAR ADC LTC2370-16
LT6202/LT6203/LT6204
20
620234fd
TYPICAL APPLICATIONS
Low Noise, Low Power 1MΩ AC
Photodiode Transimpedance Amplifier
Figure 3 shows the LT6202 applied as a transimpedance
amplifier(TIA).TheLT6202forcestheBF862ultralow-noise
JFET source to 0V, with R3 ensuring that the JFET has an
IDRAINof1mA.TheJFETactsasasourcefollower,buffering
the input of the LT6202 and making it suitable for the high
impedance feedback elements R1 and R2. The BF862 has
a minimum IDSS of 10mA and a pinchoff voltage between
–0.3V and –1.2V. The JFET gate and the LT6202 output
therefore sit at a point slightly higher than one pinchoff
voltage below ground (typically about –0.6V). When the
photodiode is illuminated, the current must come from the
LT6202’s output through R1 and R2, as in a normal TIA.
Amplifier input noise density and gain-bandwidth product
were measured at 2.4nV/Hz and 100MHz, respectively.
Note that because the JFET has a high gm, approximately
1/80Ω, its attenuation looking into R3 is only about 2%.
Gain-bandwidth product was measured at 100MHz and
the closed-loop bandwidth using a 3pF photodiode was
approximately 1.4MHz.
Precision Low Noise, Low Power, 1MΩ
Photodiode Transimpedance Amplifier
Figure 4 shows the LT6202 applied as a transimpedance
amplifier (TIA), very similar to that shown in Figure 3.
In this case, however, the JFET is not allowed to dictate
the DC-bias conditions. Rather than being grounded, the
LT6202’s noninverting input is driven by the LTC2050 to
the exact state necessary for zero JFET gate voltage. The
noise performance is nearly identical to that of the circuit
in Figure 3, with the additional benefit of excellent DC per-
formance. Input offset was measured at under 200V and
outputnoisewaswithin2mVP-Povera20MHzbandwidth.
+
VBIAS–
PHILIPS
BF862
R1
499k
R2
499k
C1
1pF
VS–
VS+
VOUT
VS = ±5V
LT6202
R3
4.99k
LT6202/03/04 F03
Figure 3. Low Noise, Low Power 1MΩ
AC Photodiode Transimpedance Amplifier
+
VBIAS–
PHILIPS
BF862
R1
499k
R2
499k
C1
1pF
VS–
VS+
VOUT
VS = ±5V
R3
4.99k
C2
0.1F
LTC2050HV
R4
10M
R5
10k
C3
1F
LT6202/03/04 F04
+
LT6202
Figure 4. Precision Low Noise, Low Power Transimpedance Amplifier
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