参数资料
型号: LT6604IUFF-5#TRPBF
厂商: Linear Technology
文件页数: 4/16页
文件大小: 0K
描述: IC AMP DIFF LN DUAL 34-QFN
标准包装: 2,500
放大器类型: 差分
电路数: 2
输出类型: 差分
电流 - 输入偏压: 30µA
电压 - 输入偏移: 8000µV
电流 - 电源: 30mA
电压 - 电源,单路/双路(±): 3 V ~ 11 V,±1.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 34-WFQFN 裸露焊盘
供应商设备封装: 34-QFN-EP(4x7)
包装: 带卷 (TR)
LT6604-5
12
66045fa
APPLICATIONS INFORMATION
Noise
The noise performance of the LT6604-5 channel can be
evaluated with the circuit of Figure 7. Given the low noise
output of the LT6604-5 and the 6dB attenuation of the
transformer coupling network, it is necessary to measure
the noise oor of the spectrum analyzer and subtract the
instrument noise from the lter noise measurement.
Example: With the IC removed and the 25Ω resistors
grounded, Figure 7, measure the total integrated noise
(eS) of the spectrum analyzer from 10 kHz to 5MHz. With
the IC inserted, the signal source (VIN) disconnected, and
the input resistors grounded, measure the total integrated
noise out of the lter (eO).Withthesignalsourceconnected,
set the frequency to 1MHz and adjust the amplitude until
VIN measures 100mVP-P. Measure the output amplitude,
VOUT, and compute the passband gain A = VOUT/VIN. Now
compute the input referred integrated noise (eIN) as:
eIN =
(eO)
2 –(e
S )
2
A
Table 1 lists the typical input referred integrated noise for
various values of RIN.
Table 1. Noise Performance
PASSBAND
GAIN
RIN
INPUT REFERRED
INTEGRATED NOISE
10kHz TO 5MHz
INPUT REFERRED
NOISE dBm/Hz
4
200Ω
24μVRMS
–149
2
402Ω
38μVRMS
–145
1
806Ω
69μVRMS
–140
Figure 8 is plot of the noise spectral density as a function
of frequency for an LT6604-5 with RIN = 806Ω using the
xture of Figure 7 (the instrument noise has been sub-
tracted from the results).
The noise at each output is comprised of a differential
component and a common mode component. Using a
transformer or combiner to convert the differential outputs
to single-ended signal rejects the common mode noise and
gives a true measure of the S/N achievable in the system.
Conversely, if each output is measured individually and the
noise power added together, the resulting calculated noise
level will be higher than the true differential noise.
Power Dissipation
The LT6604-5 ampliers combine high speed with large
signal currents in a small package. There is a need to en-
sure that the die’s junction temperature does not exceed
150°C. The LT6604-5 has an exposed pad (pin 35) which
is connected to the lower supply (V). Connecting the pad
to a ground plane helps to dissipate the heat generated
by the chip. Metal trace and plated through-holes can be
used to spread the heat generated by the device to the
backside of the PC board.
+
0.1μF
2.5V
–2.5V
+
RIN
25Ω
66045 F07
SPECTRUM
ANALYZER
INPUT
50Ω
VIN
COILCRAFT
TTWB-1010
1:1
25
27
4
34
6
2
29
7
1/2
LT6604-5
Figure 7
Figure 8. Input Referred Noise
FREQUENCY (MHz)
0.01
NOISE
DENSITY
(nV/√
Hz
)
INTEGRATED
NOISE
(μV)
100
45
40
35
30
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
66045 F08
0.1
10
1
INTEGRATED NOISE, GAIN = 1X
INTEGRATED NOISE, GAIN = 4X
NOISE DENSITY, GAIN = 1X
NOISE DENSITY, GAIN = 4X
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