参数资料
| 型号： | LTC1151CSW |
| 厂商： | Linear Technology |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP ZERO-DRIFT DUAL 16SOIC |
| 标准包装： | 47 |
| 放大器类型： | 断路器（零漂移） |
| 电路数： | 2 |
| 转换速率： | 2.5 V/µs |
| 增益带宽积： | 2MHz |
| 电流 - 输入偏压： | 15pA |
| 电压 - 输入偏移： | 0.5µV |
| 电流 - 电源： | 900µA |
| 电压 - 电源，单路/双路(±)： | 4.75 V ~ 36 V，±2.38 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SO |
| 包装： | 管件 |
| 其它名称： | LTC1151CS |
LTC1151
8
1151fa
U
S
A
O
PPLICATI
WU
U
I FOR ATIO
LEAD WIRE/SOLDER
COPPER TRACE JUNCTION
NOMINALLY UNNECESSARY
RESISTOR USED TO
THERMALLY BALANCE
OTHER INPUT RESISTOR
OUTPUT
RESISTOR LEAD, SOLDER,
COPPER TRACE JUNCTION
1151 F01
–
+
LTC1151
Figure 1. Extra Resistors Cancel Thermal EMF
Resistors are another source of thermal EMF errors.
Table 1 shows the thermal EMF generated for different
resistors. The temperature gradient across the resistor is
important, not the ambient temperature. There are two
junctions formed at each end of the resistor and if these
junctions are at the same temperature, their thermal EMFs
will cancel each other. The thermal EMF numbers are
approximate and vary with resistor value. High values give
higher thermal EMF.
Table 1. Resistor Thermal EMF
RESISTOR TYPE
THERMAL EMF/
°C GRADIENT
Tin Oxide
>1mV/°C
Carbon Composition
450V/°C
Metal Film
20V/°C
Wire Wound
Evenohm, Manganin
2V/°C
PACKAGE-INDUCED OFFSET VOLTAGE
Package-induced thermal EMF effects are another impor-
tant source of errors. They arise at the junctions formed
when wire or printed circuit traces contact a package lead.
Like all the previously mentioned thermal EMF effects,
they are outside the LTC1151’s offset nulling loop and
cannot be cancelled. The input offset voltage specification
of the LTC1151 is actually set by the package-induced
warm-up drift rather than by the circuit itself. The thermal
time constant ranges from 0.5 to 3 minutes, depending on
package type.
ALIASING
Like all sampled data systems, the LTC1151 exhibits
aliasing behavior at input frequencies near the sampling
frequency. The LTC1151 includes a high frequency cor-
rection loop which minimizes this effect. As a result,
aliasing is not a problem for many applications.
For a complete discussion of the correction circuitry and
aliasing behavior, please refer to the LTC1051/LTC1053
data sheet.
LOW SUPPLY OPERATION
The minimum supply for proper operation of the LTC1151
is typically 4.0V (
±2.0V). In single supply applications,
PSRR is guaranteed down to 4.7V (
±2.35V) to ensure
proper operation at minimum TTL supply voltage of 4.75V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LTC1151CSW#PBF | 功能描述:IC OPAMP ZERO-DRIFT DUAL 16SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:45nA 电压 - 输入偏移:2000µV 电流 - 电源:1.4mA 电流 - 输出 / 通道:40mA 电压 - 电源，单路/双路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:LM324ADTBR2G-NDLM324ADTBR2GOSTR |
| LTC1151CSW#PBF | 制造商:Linear Technology 功能描述:OPERATIONAL AMPLIFIER IC |
| LTC1151CSW#TR | 功能描述:IC OPAMP ZERO DRIFT DUAL 16SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| LTC1151CSW#TRPBF | 功能描述:IC OPAMP ZERO-DRIFT DUAL 16SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| LTC1151CSWPBF | 制造商:Linear Technology 功能描述:Chopper Stabil. Dual Amp +/-18/36V SO16W |
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