参数资料
型号: LTC1152IS8#TRPBF
厂商: Linear Technology
文件页数: 2/8页
文件大小: 0K
描述: IC OPAMP 0-DRFT R-R IN/OUT 8SOIC
标准包装: 2,500
系列: C-Load™
放大器类型: 断路器(零漂移)
电路数: 1
输出类型: 满摆幅
转换速率: 0.5 V/µs
增益带宽积: 700kHz
电流 - 输入偏压: 10pA
电压 - 输入偏移: 1µV
电流 - 电源: 2.2mA
电压 - 电源,单路/双路(±): 2.7 V ~ 14 V,±1.35 V ~ 7 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
2
LTC1152
A
U
G
W
A
W
U
W
A
R
BSOLUTEXI
TI
S
WU
U
PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
LTC1152CN8
LTC1152CS8
LTC1152IN8
LTC1152IS8
VS = 5V, TA = operating temperature range, unless otherwise specified.
Consult factory for Military grade parts.
1152
1152I
S8 PART MARKING
Total Supply Voltage (V + to V ) ............................. 14V
Input Voltage ............................ V + + 0.3V to V – 0.3V
Output Short-Circuit Duration (Pin 6) ............. Indefinite
Operating Temperature Range
LTC1152C............................................... 0
°C to 70°C
LTC1152I .......................................... – 40
°C to 85°C
Storage Temperature Range ................ – 65
°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300
°C
ELECTRICAL C
C
HARA TERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VOS
Input Offset Voltage
TA = 25°C (Note 1)
±1
±10
V
VOS
Average Input Offset Drift
(Note 1)
q
±10
±100
nV/
°C
Long-Term Offset Drift
±50
nV/
√Mo
IB
Input Bias Current
TA = 25°C (Note 2)
±10
±100
pA
q
±1000
pA
IOS
Input Offset Current
TA = 25°C (Note 2)
±20
±200
pA
q
±500
pA
en
Input Noise Voltage (Note 3)
RS = 100, 0.1Hz to 10Hz
2
3
VP-P
RS = 100, 0.1Hz to 1Hz
0.5
1
VP-P
in
Input Noise Current
f = 10Hz
0.6
fA/
√Hz
CMRR
Common-Mode Rejection Ratio
VCM = 0V to 5V
q
115
130
dB
PSRR
Power Supply Rejection Ratio
VS = 3V to 12V
110
120
dB
q
105
dB
AVOL
Large-Signal Voltage Gain
RL = 10k, VOUT = 0.5V to 4.5V
q
110
130
dB
VOUT
Maximum Output Voltage Swing (Note 4)
RL = 1k, VS = Single 5V
q
4.0
4.4
V
RL = 1k, VS = ±2.5V
q
±2.0
2.2
V
RL = 100k, VS = ±2.5V
±2.49
V
SR
Slew Rate
RL = 10k, CL = 50pF, VS = ±2.5V
0.5
V/
s
GBW
Gain-Bandwidth Product
RL = 10k, CL = 50pF, VS = ±2.5V
0.7
MHz
IS
Supply Current
No Load
q
2.2
3.0
mA
Shutdown = 0V
q
15
A
IOSD
Output Leakage Current
Shutdown = 0V
q
±10
±100
nA
VCP
Charge Pump Output Voltage
ICP = 0
7.3
V
VIL
Shutdown Pin Input Low Voltage
2.5
V
VIH
Shutdown Pin Input High Voltage
4
V
IIN
Shutdown Pin Input Current
VSHDN = 0V
q
–1
–5
A
fCP
Internal Charge Pump Frequency
TA = 25°C
4.7
MHz
fSMPL
Internal Sampling Frequency
TA = 25°C
2.3
kHz
TJMAX = 110°C, θJA = 130°C/ W (N8)
TJMAX = 110°C, θJA = 200°C/ W (S8)
1
2
3
4
8
7
6
5
TOP VIEW
SHDN
–IN
+IN
V
CP
V+
OUT
COMP
N8 PACKAGE
8-LEAD PDIP
S8 PACKAGE
8-LEAD PLASTIC SO
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