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参数资料
| 型号： | LTC1628CUH#TRPBF |
| 厂商： | Linear Technology |
| 文件页数： | 15/32页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM 32-QFN |
| 标准包装： | 2,500 |
| PWM 型： | 电流模式 |
| 输出数： | 2 |
| 频率 - 最大： | 360kHz |
| 占空比： | 99.4% |
| 电源电压： | 3.5 V ~ 30 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 32-WFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
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LTC1628/LTC1628-PG
APPLICATIO S I FOR ATIO
Main Switch Duty Cycle = OUT
Synchronous Switch Duty Cycle = IN OUT
( ) ( )
1 + δ R
P MAIN = OUT I MAX DS ( ON ) +
( ) ( I MAX )( C RSS )( ) f
( ) ( )
1 + δ R
P SYNC = IN OUT I MAX DS ( ON )
EXTV CC Pin Connection). Consequently, logic-level
threshold MOSFETs must be used in most applications.
The only exception is if low input voltage is expected
(V IN < 5V); then, sub-logic level threshold MOSFETs
(V GS(TH) < 3V) should be used. Pay close attention to the
BV DSS specification for the MOSFETs as well; most of the
logic level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the “ON”
resistance R DS(ON) , reverse transfer capacitance C RSS ,
input voltage and maximum output current. When the
LTC1628 is operating in continuous mode the duty cycles
for the top and bottom MOSFETs are given by:
V
V IN
V – V
V IN
The MOSFET power dissipations at maximum output
current are given by:
V 2
V IN
2
k V IN
V – V 2
V IN
where δ is the temperature dependency of R DS(ON) and k
is a constant inversely related to the gate drive current.
Both MOSFETs have I 2 R losses while the topside N-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For V IN < 20V the
high current efficiency generally improves with larger
MOSFETs, while for V IN > 20V the transition losses rapidly
increase to the point that the use of a higher R DS(ON) device
with lower C RSS actually provides higher efficiency. The
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during a
short-circuit when the synchronous switch is on close to
100% of the period.
The term (1+ δ ) is generally given for a MOSFET in the form
of a normalized R DS(ON) vs Temperature curve, but
δ = 0.005/ ° C can be used as an approximation for low
voltage MOSFETs. C RSS is usually specified in the MOS-
FET characteristics. The constant k = 1.7 can be used to
estimate the contributions of the two terms in the main
switch dissipation equation.
The Schottky diode D1 shown in Figure 1 conducts during
the dead-time between the conduction of the two power
MOSFETs. This prevents the body diode of the bottom
MOSFET from turning on, storing charge during the dead-
time and requiring a reverse recovery period that could
cost as much as 3% in efficiency at high V IN . A 1A to 3A
Schottky is generally a good compromise for both regions
of operation due to the relatively small average current.
Larger diodes result in additional transition losses due to
their larger junction capacitance.
C IN and C OUT Selection
The selection of C IN is simplified by the multiphase archi-
tecture and its impact on the worst-case RMS current
drawn through the input network (battery/fuse/capacitor).
It can be shown that the worst case RMS current occurs
when only one controller is operating. The controller with
the highest (V OUT )(I OUT ) product needs to be used in the
formula below to determine the maximum RMS current
requirement. Increasing the output current, drawn from
the other out-of-phase controller, will actually decrease
the input RMS ripple current from this maximum value
(see Figure 4). The out-of-phase technique typically re-
duces the input capacitor’s RMS ripple current by a factor
of 30% to 70% when compared to a single phase power
supply solution.
The type of input capacitor, value and ESR rating have
efficiency effects that need to be considered in the selec-
tion process. The capacitance value chosen should be
sufficient to store adequate charge to keep high peak
battery currents down. 20 μ F to 40 μ F is usually sufficient
for a 25W output supply operating at 200kHz. The ESR of
the capacitor is important for capacitor power dissipation
as well as overall battery efficiency. All of the power (RMS
ripple current ? ESR) not only heats up the capacitor but
wastes power from the battery.
1628fb
15
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相关代理商/技术参数 |
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|---|---|
| LTC1628IG | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1628IG#PBF | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 特色产品:LM3753/54 Scalable 2-Phase Synchronous Buck Controllers 标准包装:1 系列:PowerWise® PWM 型:电压模式 输出数:1 频率 - 最大:1MHz 占空比:81% 电源电压:4.5 V ~ 18 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-5°C ~ 125°C 封装/外壳:32-WFQFN 裸露焊盘 包装:Digi-Reel® 产品目录页面:1303 (CN2011-ZH PDF) 其它名称:LM3754SQDKR |
| LTC1628IG#TR | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1628IG#TRPBF | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1628IGPBF | 制造商:Linear Technology 功能描述:DC-DC Controller Dual Step-Dn 36V SSOP28 |
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