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参数资料
| 型号： | LTC1645CS#TRPBF |
| 厂商： | Linear Technology |
| 文件页数： | 9/24页 |
| 文件大小： | 329K |
| 描述： | IC CTRLR SEQ HOTSWAP DUAL 14SOIC |
| 标准包装： | 2,500 |
| 类型： | 热交换控制器 |
| 应用： | 通用 |
| 内部开关： | 无 |
| 电源电压： | 1.2 V ~ 12 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 带卷 (TR) |
9
LTC1645
1645fa
APPLICATIO S I FOR ATIO
U
U
U
(a) Undamped V
CC
Waveform (48" Leads)
(b) Undamped V
CC
Waveform (8" Leads)
Figure 5. Ring Experiment
No bulk capacitance is present to slow the rate of rise and
heavily damp the parasitic resonance. Instead, the fast
edge shock excites a resonant circuit formed by a combi-
nation of wiring harness, backplane and circuit board
parasitic inductances and FET capacitance. In theory, the
peak voltage should rise to 2X the input supply, but in
practice the peak can reach 2.5X, owing to the effects of
voltage dependent FET capacitance.
The absolute maximum V
CCn
potential for the LTC1645 is
13.2V; any circuit with an input of 5V or greater should be
scrutinized for ringing. A well-bypassed backplane should
not escape suspicion: circuit board trace inductances of as
little as 10nH can produce sufficient ringing to overvoltage
V
CC
.
Check ringing with a fast storage oscilloscope (such as a
LECROY 9314AL DSO) by attaching coax or a probe to V
CC
and GND, then repeatedly inserting the circuit board into
the backplane. Figures 5a and 5b show typical results in a
12V application with different V
CC
lead lengths. The peak
amplitude reaches 22V, breaking down the ESD protection
diode in the process.
There are two methods for eliminating ringing: clipping
and snubbing. A transient voltage suppressor is an effec-
tive means of limiting peak voltage to a safe level.
Figure 6 shows the effect of adding an ON Semiconductor,
1SMA12CAT3, on the waveform of Figure 5.
Figures 7a and 7b show the effects of snubbing with
different RC networks. The capacitor value is chosen as
10X to 100X the FET C
OSS
under bias and R is selected for
best damping1& to 50& depending on the value of
parasitic inductance.
V
OUT
0.1礔
1645 F05
10&
R1
0.01&
12V
IRF7413
C
LOAD
+
+
LTC1645
POWER
LEADS
SCOPE
PROBE
8'
1祍/DIV
1645 F05a
0V
24V
1 s/DIV
1645 F05b
0V
24V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LTC1645IS | 功能描述:IC CTRLR SEQ HOTSWAP DUAL 14SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
| LTC1645IS#PBF | 功能描述:IC CTLR HOT SWAP SEQ DUAL 14SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
| LTC1645IS#TR | 功能描述:IC CTRLR SEQ HOTSWAP DUAL 14SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
| LTC1645IS#TRPBF | 功能描述:IC CTRLR SEQ HOTSWAP DUAL 14SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
| LTC1645IS8 | 功能描述:IC CTRLR SEQ HOTSWAP DUAL 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
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