参数资料
型号: LTC1775IS#TRPBF
厂商: Linear Technology
文件页数: 12/24页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 16-SOIC
标准包装: 2,500
PWM 型: 电流模式
输出数: 1
频率 - 最大: 165kHz
占空比: 99%
电源电压: 4.3 V ~ 36 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
LTC1775
APPLICATIO S I FOR ATIO
Normally, the top and bottom MOSFETs will be of the same
type. A bottom MOSFET with lower R DS(ON) than the top
may be chosen if the resulting increase in short-circuit
current is tolerable. However, the bottom MOSFET should
never be chosen to have a higher nominal R DS(ON) than the
top MOSFET.
Inductor Core Selection
Once the value for L is known, the type of inductor must be
selected. High efficiency converters generally cannot
regulators. The diode may be omitted if the efficiency loss
can be tolerated.
Parasitic Lead Inductance Effects
Because the LTC1775 is designed to operate with rela-
tively large currents through single (or multiple) MOSFET
switches, the lead inductance of these power switches can
become a significant concern. The table below shows
typical values of lead inductance for some common pack-
ages:
afford the core loss found in low cost powdered iron cores,
forcing the use of more expensive ferrite, molypermalloy
or Kool M μ ? cores. Actual core loss is independent of core
size for a fixed inductor value, but it is very dependent on
the inductance selected. As inductance increases, core
losses go down. Unfortunately, increased inductance
requires more turns of wire and therefore copper losses
MOSFET Package
TO-220
DDPAK
DPAK
SO-8
Lead Inductance
4nH to 12nH
4nH
1.5nH
1nH
will increase.
Ferrite designs have very low core loss and are preferred
at high switching frequencies, so design goals can con-
centrate on copper loss and preventing saturation. Ferrite
core material saturates “hard,” which means that induc-
tance collapses rapidly when the peak design current is
exceeded. This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple. Do
not allow the core to saturate!
Molypermalloy (from Magnetics, Inc.) is a very good, low
loss core material for toroids, but it is more expensive than
ferrite. A reasonable compromise from the same manu-
facturer is Kool M μ . Toroids are very space efficient,
especially when you can use several layers of wire.
Because they generally lack a bobbin, mounting is more
difficult. However, designs for surface mount are available
which do not increase the height significantly.
Schottky Diode Selection
The Schottky diode D1 shown in Figure 1 conducts during
the dead time between the conduction of the power
MOSFETs. This prevents the body diode of the bottom
MOSFET from turning on and storing charge during the
dead time, which could cost as much as 1% in efficiency.
A 1A Schottky diode is generally a good size for 3A to 5A
Kool M μ is a registered trademark of Magnetics, Inc.
12
Of particular concern are switches in TO-220 packages
which can have a series inductance of between 4nH and
12nH depending upon the depth of insertion into the
circuit board. When the main (top) switch is turned on, the
lead inductance LP forms a voltage divider with the power
inductor L1. The voltage V LP across this parasitic adds to
the voltage from the switch on-resistance and increases
the current sense voltage.
V LP = (V IN – V OUT )LP/L1
The result is lower value of current limit than would have
been expected otherwise. For example, a 10nH lead induc-
tance with a 5 μ H power inductor has 50mV across it when
V IN = 30V and V OUT = 5V. Thus, the 300mV current limit
will be reached when the switch voltage due to on-
resistance is only 250mV, a 17% reduction. This effect is
most noticeable at higher input voltages.
Lead inductance also reduces the benefit of the Schottky
diode D1 by delaying commutation of the inductor current
from the diode over to the synchronous (bottom) switch.
With the diode forward biased when the synchronous
switch turns on, there is only about 500mV applied across
the lead and trace inductance between the switch and the
diode. It takes about 400ns to commutate a 20A current in
this case. This delay reduces efficiency and can also
increase the foldback current limit of the LTC1775. The
相关PDF资料
PDF描述
RMM15DRMH-S288 CONN EDGECARD 30POS .156 EXTEND
VE-B7Y-EW-F2 CONVERTER MOD DC/DC 3.3V 66W
LTC1775IS#TR IC REG CTRLR BUCK PWM CM 16-SOIC
EBC35DRES-S734 CONN EDGECARD 70POS .100 EYELET
LTC1435IS#PBF IC REG CTRLR BUCK PWM CM 16-SOIC
相关代理商/技术参数
参数描述
LTC1778EGN 功能描述:IC REG CTRLR BUCK PWM CM 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR)
LTC1778EGN#PBF 功能描述:IC REG CTRLR BUCK PWM CM 16-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR)
LTC1778EGN#TR 功能描述:IC REG CTRLR BUCK PWM CM 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR)
LTC1778EGN#TRPBF 功能描述:IC REG CTRLR BUCK PWM CM 16-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR)
LTC1778EGN-1 功能描述:IC REG CTRLR BUCK PWM CM 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR)