参数资料
型号: LTC1871HMS#TR
厂商: LINEAR TECHNOLOGY CORP
元件分类: 稳压器
英文描述: 0.05 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO10
封装: PLASTIC, MSOP-10
文件页数: 14/36页
文件大小: 519K
代理商: LTC1871HMS#TR
LTC1871
21
1871fe
APPLICATIONS INFORMATION
A second, more severe transient can occur when con-
necting loads with large (> 1μF) supply bypass capacitors.
The discharged bypass capacitors are effectively put in
parallel with CO, causing a nearly instantaneous drop in
VO. No regulator can deliver enough current to prevent
this problem if the load switch resistance is low and it is
driven quickly. The only solution is to limit the rise time
of the switch drive in order to limit the inrush current
di/dt to the load.
Boost Converter Design Example
The design example given here will be for the circuit shown
in Figure 1. The input voltage is 3.3V, and the output is 5V
at a maximum load current of 7A (10A peak).
1. The duty cycle is:
D
=
VO + VD –VIN
VO + VD
=
5
+ 0.4 – 3.3
5
+ 0.4
= 38.9%
2. Pulse-skip operation is chosen so the MODE/SYNC pin
is shorted to INTVCC.
3. The operating frequency is chosen to be 300kHz to
reduce the size of the inductor. From Figure 5, the
resistor from the FREQ pin to ground is 80k.
4. An inductor ripple current of 40% of the maximum load
current is chosen, so the peak input current (which is
also the minimum saturation current) is:
IIN(PEAK) = 1+
2
IO(MAX)
1– DMAX
= 1.2
7
1– 0.39
= 13.8A
The inductor ripple current is:
IL =
IO(MAX)
1– DMAX
= 0.4
7
1– 0.39
= 4.6A
And so the inductor value is:
L
=
VIN(MIN)
IL f
DMAX =
3.3V
4.6A 300kHz
0.39
= 0.93μH
The component chosen is a 1μH inductor made by
Sumida (part number CEP125-H 1ROMH) which has
a saturation current of greater than 20A.
5. With the input voltage to the IC bootstrapped to the
output of the power supply (5V), a logic-level MOSFET
can be used. Because the duty cycle is 39%, the maxi-
mum SENSE pin threshold voltage is reduced from its
low duty cycle typical value of 150mV to approximately
140mV. Assuming a MOSFET junction temperature of
125°C, the room temperature MOSFET RDS(ON) should
be less than:
RDS(ON) VSENSE(MAX)
1– DMAX
1
+
2
IO(MAX) T
= 0.140V
1– 0.39
1
+
0.4
2
7A 1.5
= 6.8m
The MOSFET used was the Fairchild FDS7760A, which
has a maximum RDS(ON) of 8mΩ at 4.5V VGS, a BVDSS
of greater than 30V, and a gate charge of 37nC at 5V
VGS.
6. The diode for this design must handle a maximum
DC output current of 10A and be rated for a minimum
reverse voltage of VOUT, or 5V. A 25A, 15V diode from
On Semiconductor (MBRB2515L) was chosen for its
high power dissipation capability.
7. The output capacitor usually consists of a high valued
bulk C connected in parallel with a lower valued, low
ESR ceramic. Based on a maximum output ripple voltage
of 1%, or 50mV, the bulk C needs to be greater than:
COUT
IOUT(MAX)
0.01 VOUT f
=
7A
0.01 5V 300kHz
= 466μF
The RMS ripple current rating for this capacitor needs
to exceed:
IRMS(COUT) IO(MAX)
VO –VIN(MIN)
VIN(MIN)
=
7A
5V – 3.3V
3.3V
= 5A
To satisfy this high RMS current demand, four
150μF Panasonic capacitors (EEFUEOJ151R) are
required. In parallel with these bulk capacitors, two
22μF, low ESR (X5R) Taiyo Yuden ceramic capacitors
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