参数资料
型号: LTC3413IFE#TRPBF
厂商: Linear Technology
文件页数: 10/16页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ 3A 16TSSOP
标准包装: 2,500
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 0.7 V ~ 5.5 V
输入电压: 2.25 V ~ 5.5 V
PWM 型: 电流模式
频率 - 开关: 1MHz
电流 - 输出: 3A
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-TSSOP(0.173",4.40mm)裸露焊盘
包装: 带卷 (TR)
供应商设备封装: 16-TSSOP-EP
LTC3413
APPLICATIONS INFORMATION
in Figure 1a. The soft-start duration can be calculated by
using the following formula:
2. I 2 R losses are calculated from the resistances of the
internal switches, R SW , and external inductor R L . In con-
= R
? V IN – 1 . 8 V ? ?
? V IN ?
t SS SS ? C SS ln ?
(Seconds)
tinuous mode the average output current ?owing through
inductor L is “chopped” between the main switch and the
synchronous switch. Thus, the series resistance looking
Ef?ciency Considerations
The ef?ciency of a switching regulator is equal to the output
power divided by the input power times 100%. It is often
useful to analyze individual losses to determine what is
limiting the ef?ciency and which change would produce
the most improvement. Ef?ciency can be expressed as:
Ef?ciency = 100% - (L1 + L2 + L3 + ...)
where L1, L2, etc. are the individual losses as a percent-
age of input power.
Although all dissipative elements in the circuit produce
losses, two main sources usually account for most of the
losses: V IN quiescent current and I 2 R losses.
The V IN quiescent current loss dominates the ef?ciency loss
at very low load currents whereas the I 2 R loss dominates
the ef?ciency loss at medium to high load currents. In a
typical ef?ciency plot, the ef?ciency curve at very low load
currents can be misleading since the actual power lost is
of no consequence.
1. The V IN quiescent current is due to two components:
the DC bias current as given in the Electrical Characteris-
tics and the internal main switch and synchronous switch
gate charge currents. The gate charge current results
from switching the gate capacitance of the internal power
MOSFET switches. Each time the gate is switched from
high to low to high again, a packet of charge dQ moves
from V IN to ground. The resulting dQ/dt is the current out
of V IN that is typically larger than the DC bias current. In
continuous mode, I GATECHG = f(Q T + Q B ) where Q T and
Q B are the gate charges of the internal top and bottom
switches. Both the DC bias and gate charge losses are
proportional to V IN and thus their effects will be more
pronounced at higher supply voltages.
into the SW pin is a function of both top and bottom
MOSFET R DS(ON) and the duty cycle (DC) as follows:
R SW = (R DS(ON)TOP )(DC) + (R DS(ON)BOT )(1 – DC)
The R DS(ON) for both the top and bottom MOSFETs can
be obtained from the Typical Performance Characteristics
curves. Thus, to obtain I 2 R losses, simply add R SW to
R L and multiply the result by the square of the average
output current.
Other losses including C IN and C OUT ESR dissipative losses
and inductor core losses generally account for less than
2% of the total loss.
Thermal Considerations
In most applications, the LTC3413 does not dissipate much
heat due to its high ef?ciency.
But, in applications where the LTC3413 is running at high
ambient temperature with low supply voltage and high
duty cycles, such as in dropout, the heat dissipated may
exceed the maximum junction temperature of the part. If
the junction temperature reaches approximately 150°C,
both power switches will be turned off and the SW node
will become high impedance.
To avoid the LTC3413 from exceeding the maximum junc-
tion temperature, the user will need to do some thermal
analysis. The goal of the thermal analysis is to determine
whether the power dissipated exceeds the maximum
junction temperature of the part. The temperature rise is
given by:
T R = (P D )( θ JA )
where P D is the power dissipated by the regulator and θ JA
is the thermal resistance from the junction of the die to
the ambient temperature.
3413fc
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