参数资料
型号: LTC3499EDD#PBF
厂商: Linear Technology
文件页数: 3/16页
文件大小: 0K
描述: IC REG BOOST SYNC ADJ 0.75A 8DFN
标准包装: 121
类型: 升压(升压)
输出类型: 可调式
输出数: 1
输出电压: 2 V ~ 6 V
输入电压: 1.8 V ~ 5.5 V
PWM 型: 电流模式,混合
频率 - 开关: 1.2MHz
电流 - 输出: 750mA
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-WFDFN 裸露焊盘
包装: 管件
供应商设备封装: 8-DFN-EP(3x3)
产品目录页面: 1334 (CN2011-ZH PDF)
LTC3499/LTC3499B
ELECTRICAL CHARACTERISTICS The l denotes specifications that apply over the full operating temperature
range, otherwise specifications are at T A = 25°C. V IN = 2.4V, V OUT = 5V, SHDN = 2.4V, T A = T J unless otherwise noted. (Note 3)
SYMBOL
I FB
I VIN
I SD
I BURST
I NMOS
I PMOS
R NMOS
R PMOS
I LIM
t DLY, ILIM
D MAX
D MIN
PARAMETER
FB Input Current
V IN Quiescent Current
V IN Quiescent Current in Shutdown
Quiescent Current – Burst Mode Operation
NMOS Switch Leakage Current
PMOS Switch Leakage Current
NMOS Switch On Resistance
PMOS Switch On Resistance
NMOS Current Limit
Current Limit Delay to Output
Maximum Duty Cycle
Minimum Duty Cycle
CONDITIONS
V FB = 1.22V
No Output Load
SHDN = 0V, V OUT = 0V
V IN Current at 2.4V (LTC3499 Only)
V OUT Current at 5V (LTC3499 Only)
V SW = 6V
V OUT = 6V, V SW = 0V
V OUT = 3.3V
V OUT = 5V
V OUT = 3.3V
V OUT = 5V
Note 2
l
l
l
l
MIN
0.75
80
TYP
3
300
0.1
20
1.5
0.1
0.1
0.45
0.4
0.58
0.45
1
60
85
MAX
50
600
1
5
5
0
UNITS
nA
μA
μA
μA
μA
μA
μA
Ω
Ω
Ω
Ω
A
ns
%
%
f OSC
Frequency Accuracy
l
1
1.2
1.4
MHz
G mEA
I SOURCE
I SINK
Error Amplifier Transconductance
Error Amplifier Source Current
Error Amplifier Sink Current
40
–5
5
μmhos
μA
μA
I SS
V OV
V OV(HYST)
SS Current Source
V OUT Overvoltage Threshold
V OUT Overvoltage Hysteresis
V SS = 1V
–3
6.8
400
μA
V
mV
Shutdown
V SHDN (LOW)
SHDN Input Low Voltage
l
0.2
V
V SHDN (HIGH)
I SD
SHDN Input High Voltage
SHDN Input Current
Measured at SW
l
1.2
1
V
μA
Reverse Battery
I VOUT,REVBATT
I VIN,REVBATT
I SHDN ,REVBATT
V OUT Reverse-Battery Current
V IN and V SW Reverse-Battery Current
SHDN Reverse-Battery Current
V OUT = 0V, V IN = V SHDN = V SW = –6V
V OUT = 0V, V IN = V SHDN = V SW = –6V
V OUT = 0V, V IN = V SHDN = V SW = –6V
l
l
l
5
–5
–5
μA
μA
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specification is guaranteed by design and not 100% tested in
production.
Note 4: These ICs include overtemperature protection that is intended
to protect the devices during momentary overload conditions. Junction
temperatures will exceed 125°C when overtemperature protection is
active. Continuous operation above the specified maximum operating
temperature range may impair device reliability.
Note 3: The LTC3499E/LTC3499BE are guaranteed to meet device
specifications from 0°C to 85°C. Specifications over the –40°C to 85°C
operating temperature are assured by design, characterization and
correlation with statistical process controls.
3499fc
3
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