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| 型号： | LTC3787MPGN#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 24/36页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BST PWM CM 28-SSOP |
| 标准包装： | 49 |
| 系列： | PolyPhase® |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 850kHz |
| 占空比： | 100% |
| 电源电压： | 4.5 V ~ 38 V |
| 降压： | 无 |
| 升压： | 是 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -55°C ~ 150°C |
| 封装/外壳： | 28-SSOP（0.154"，3.90mm 宽） |
| 包装： | 管件 |
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LTC3787
APPLICATIONS INFORMATION
Table 2 summarizes the different states in which the FREQ
pin can be used.
Table 2.
INTV CC regulator current, 3) I 2 R losses, 4) bottom MOS-
FET transition losses, 5) body diode conduction losses.
1. The VBIAS current is the DC supply current given in the
FREQ PIN
0V
INTV CC
Resistor
Any of the Above
PLLIN/MODE PIN
DC Voltage
DC Voltage
DC Voltage
External Clock
FREQUENCY
350kHz
535kHz
50kHz to 900kHz
Phase Locked to
External Clock
Electrical Characteristics table, which excludes MOSFET
driver and control currents. VBIAS current typically
results in a small (<0.1%) loss.
2. INTV CC current is the sum of the MOSFET driver and
control currents. The MOSFET driver current results
from switching the gate capacitance of the power
V OUT 3 I OUT(MAX)
Minimum On-Time Considerations
Minimum on-time, t ON(MIN) , is the smallest time duration
that the LTC3787 is capable of turning on the bottom
MOSFET. It is determined by internal timing delays and
the gate charge required to turn on the top MOSFET. Low
duty cycle applications may approach this minimum on-
time limit.
In forced continuous mode, if the duty cycle falls below
what can be accommodated by the minimum on-time,
the controller will begin to skip cycles but the output will
continue to be regulated. More cycles will be skipped when
V IN increases. Once V IN rises above V OUT , the loop keeps
the top MOSFET continuously on. The minimum on-time
for the LTC3787 is approximately 110ns.
Efficiency Considerations
The percent efficiency of a switching regulator is equal to
the output power divided by the input power times 100%.
It is often useful to analyze individual losses to determine
what is limiting the efficiency and which change would
produce the greatest improvement. Percent efficiency
can be expressed as:
%Efficiency = 100% – (L1 + L2 + L3 + ...)
where L1, L2, etc., are the individual losses as a percent-
age of input power.
MOSFETs. Each time a MOSFET gate is switched from
low to high to low again, a packet of charge, dQ, moves
from INTV CC to ground. The resulting dQ/dt is a current
out of INTV CC that is typically much larger than the
control circuit current. In continuous mode, I GATECHG
= f(Q T + Q B ), where Q T and Q B are the gate charges of
the topside and bottom side MOSFETs.
3. DC I 2 R losses. These arise from the resistances of the
MOSFETs, sensing resistor, inductor and PC board traces
and cause the efficiency to drop at high output currents.
4. Transition losses apply only to the bottom MOSFET(s),
and become significant only when operating at low
input voltages. Transition losses can be estimated from:
Transition Loss = (1.7) ? ?C RSS ? f
V IN 2
5. Body diode conduction losses are more significant at
higher switching frequency. During the dead time, the loss
in the top MOSFETs is I OUT ? V DS , where V DS is around
0.7V. At higher switching frequency, the dead time be-
comes a good percentage of switching cycle and causes
the efficiency to drop.
Other hidden losses, such as copper trace and internal
battery resistances, can account for an additional efficiency
degradation in portable systems. It is very important to
include these system-level losses during the design phase.
Although all dissipative elements in the circuit produce
losses, five main sources usually account for most of
the losses in LTC3787 circuits: 1) IC VBIAS current, 2)
3787fc
24
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