参数资料
型号: LTC3788EGN-1#TRPBF
厂商: LINEAR TECHNOLOGY CORP
元件分类: 稳压器
英文描述: DUAL SWITCHING CONTROLLER, 900 kHz SWITCHING FREQ-MAX, PDSO28
封装: 0.150 INCH, LEAD FREE, PLASTIC, SSOP-28
文件页数: 11/30页
文件大小: 384K
代理商: LTC3788EGN-1#TRPBF
LTC3788-1
19
37881fb
applicaTions inForMaTion
case, power dissipation for the IC is highest and is equal
to VIN IINTVCC. The gate charge current is dependent
on operating frequency, as discussed in the Efficiency
Considerations section. The junction temperature can be
estimated by using the equations given in Note 3 of the
Electrical Characteristics. For example, the LTC3788-1
INTVCC current is limited to less than 15mA from a 40V
supply when not using the EXTVCC supply:
TJ = 70°C + (15mA)(40V)(90°C/W) = 125°C
To prevent the maximum junction temperature from being
exceeded, the input supply current must be checked while
operating in continuous conduction mode (PLLIN/MODE
= INTVCC) at maximum VIN.
When the voltage applied to EXTVCC rises above 4.8V, the
VIN LDO is turned off and the EXTVCC LDO is enabled. The
EXTVCC LDO remains on as long as the voltage applied to
EXTVCC remains above 4.55V. The EXTVCC LDO attempts
to regulate the INTVCC voltage to 5.4V, so while EXTVCC
is less than 5.4V, the LDO is in dropout and the INTVCC
voltage is approximately equal to EXTVCC. When EXTVCC
is greater than 5.4V, up to an absolute maximum of 6V,
INTVCC is regulated to 5.4V.
Significant thermal gains can be realized by powering
INTVCC from an external supply. Tying the EXTVCC pin
to a 5V supply reduces the junction temperature in the
previous example from 125°C to 77°C:
TJ = 70°C + (15mA)(5V)(90°C/W) = 77°C
If more current is required through the EXTVCC LDO than
is specified, an external Schottky diode can be added
between the EXTVCC and INTVCC pins. Make sure that in
all cases EXTVCC ≤ VBIAS.
The following list summarizes possible connections for
EXTVCC:
EXTVCC Left Open (or Grounded). This will cause
INTVCC to be powered from the internal 5.4V regulator
resulting in an efficiency penalty at high input voltages.
EXTVCC Connected to an External Supply. If an external
supply is available in the 5.4V to 6V range, it may be
used to power EXTVCC providing it is compatible with
the MOSFET gate drive requirements. Ensure that
EXTVCC < VBIAS.
Topside MOSFET Driver Supply (CB, DB)
External bootstrap capacitors CB connected to the BOOST
pins supply the gate drive voltages for the topside MOS-
FETs. Capacitor CBintheBlockDiagramischargedthough
external diode DB from INTVCC when the SW pin is low.
When one of the topside MOSFETs is to be turned on, the
driver places the CB voltage across the gate-source of the
desired MOSFET. This enhances the MOSFET and turns on
the topside switch. The switch node voltage, SW, rises to
VIN and the BOOST pin follows. With the topside MOSFET
on, the boost voltage is above the input supply: VBOOST =
VIN + VINTVCC. The value of the boost capacitor CB needs
to be 100 times that of the total input capacitance of the
topsideMOSFET(s).Thereversebreakdownoftheexternal
Schottky diode must be greater than VIN(MAX).
The external diode DB can be a Schottky diode or silicon
diode, but in either case it should have low leakage and fast
recovery. Pay close attention to the reverse leakage at high
temperatures where it generally increases substantially.
Each of the topside MOSFET drivers includes an internal
charge pump that delivers current to the bootstrap capaci-
tor from the BOOST pin. This charge current maintains
the bias voltage required to keep the top MOSFET on
continuously during dropout/overvoltage conditions. The
Schottky/silicon diodes selected for the topside drivers
shouldhaveareverseleakagelessthantheavailableoutput
current the charge pump can supply. Curves displaying
the available charge pump current under different operat-
ing conditions can be found in the Typical Performance
Characteristics section.
A leaky diode DB in the boost converter can not only
prevent the top MOSFET from fully turning on but it can
also completely discharge the bootstrap capacitor CB and
create a current path from the input voltage to the BOOST
pin to INTVCC. This can cause INTVCC to rise if the diode
leakage exceeds the current consumption on INTVCC.
This is particularly a concern in Burst Mode operation
where the load on INTVCC can be very small. The external
Schottky or silicon diode should be carefully chosen such
that INTVCC never gets charged up much higher than its
normal regulation voltage.
相关PDF资料
PDF描述
LTC3789EGN#TRPBF 0.1 A SWITCHING CONTROLLER, 710 kHz SWITCHING FREQ-MAX, PDSO28
LTC3789EUFD#TRPBF 0.1 A SWITCHING CONTROLLER, 710 kHz SWITCHING FREQ-MAX, PQCC28
LTC3789EGN#PBF 0.1 A SWITCHING CONTROLLER, 710 kHz SWITCHING FREQ-MAX, PDSO28
LTC3789IUFD#PBF 0.1 A SWITCHING CONTROLLER, 710 kHz SWITCHING FREQ-MAX, PQCC28
LTC3789IGN#TRPBF 0.1 A SWITCHING CONTROLLER, 710 kHz SWITCHING FREQ-MAX, PDSO28
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