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参数资料
| 型号： | LTC3809IMSE-1#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 13/24页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM 10-MSOP |
| 标准包装： | 50 |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 600kHz |
| 占空比： | 100% |
| 电源电压： | 2.75 V ~ 9.8 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 包装： | 管件 |
LTC3809-1
APPLICATIONS INFORMATION
2.0
Top P-Channel Duty Cycle =
V OUT
V IN
V ? V OUT
1.5
1.0
0.5
Bottom N- C hannel Duty Cycle = IN
V IN
The MOSFET power dissipations at maximum output
current are:
? I OUT ( MAX ) ? ρ T DS ( ON ) + 2 ? V IN
? R
0
–50
0
50
100
150
P TOP =
V OUT
V IN
2 2
JUNCTION TEMPERATURE (°C)
38091 F02
? I OUT ( MAX ) ? C RSS ? f
? I OUT ( MAX ) ? ρ T DS ( ON )
? R
Figure 2. R DS(ON) vs Temperature
P BOT =
V IN – V OUT
V IN
2
The short-circuit current sense threshold Δ V SC is set
approximately 90mV when IPRG is ?oating (60mV when
IPRG is tied low; 150mV when IPRG is tied high). The
on-resistance of N-channel MOSFET is determined by:
Both MOSFETs have I 2 R losses and the P TOP equation
includes an additional term for transition losses, which are
largest at high input voltages. The bottom MOSFET losses
are greatest at high input voltage or during a short-circuit
R DS ( ON ) MAX =
Δ V SC
I SC ( PEAK )
when the bottom duty cycle is 100%.
The LTC3809-1 utilizes a non-overlapping, anti-shoot-
through gate drive control scheme to ensure that the
The short-circuit current limit (I SC(PEAK) ) should be larger
than the I OUT(MAX) with some margin to avoid interfering
with the peak current sensing loop. On the other hand,
in order to prevent the MOSFETs from excessive heating
and the inductor from saturation, I SC(PEAK) should be
smaller than the minimum value of their current ratings.
A reasonable range is:
I OUT(MAX) < I SC(PEAK) < I RATING(MIN)
Therefore, the on-resistance of N-channel MOSFET should
be chosen within the following range:
P- and N-channel MOSFETs are not turned on at the same
time. To function properly, the control scheme requires
that the MOSFETs used are intended for DC/DC switching
applications. Many power MOSFETs, particularly P-channel
MOSFETs, are intended to be used as static switches and
therefore are slow to turn on or off.
Reasonable starting criteria for selecting the P-channel
MOSFET are that it must typically have a gate charge (Q G )
less than 25nC to 30nC (at 4.5V GS ) and a turn-off delay
(t D(OFF) ) of less than approximately 140ns. However, due
to differences in test and speci?cation methods of various
Δ V SC
I RATING ( MIN )
< R DS ( ON ) <
Δ V SC
I OUT ( MAX )
MOSFET manufacturers, and in the variations in Q G and
t D(OFF) with gate drive (V IN ) voltage, the P-channel MOSFET
ultimately should be evaluated in the actual LTC3809-1
where Δ V SC is 90mV, 60mV or 150mV with IPRG being
?oated, tied to GND or V IN respectively.
The power dissipated in the MOSFET strongly depends
on its respective duty cycles and load current. When the
LTC3809-1 is operating in continuous mode, the duty
cycles for the MOSFETs are:
application circuit to ensure proper operation.
Shoot-through between the P-channel and N-channel
MOSFETs can most easily be spotted by monitoring the
input supply current. As the input supply voltage increases,
if the input supply current increases dramatically, then the
likely cause is shoot-through. Note that some MOSFETs
38091fc
13
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