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| 型号： | LTC3816IFE#TRPBF |
| 厂商： | Linear Technology |
| 文件页数： | 5/44页 |
| 文件大小： | 0K |
| 描述： | IC CONTROLLER S-PHASE 38TSSOP |
| 标准包装： | 200 |
| 应用： | 控制器，Intel IMVP-6，IMVP-6.5? |
| 输入电压： | 4.5 V ~ 36 V |
| 输出数： | 1 |
| 输出电压： | 0.013 V ~ 1.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 38-TFSOP （0.173"，4.40mm 宽）裸露焊盘 |
| 供应商设备封装： | 38-TSSOP 裸露焊盘 |
| 包装： | 带卷 (TR) |
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LTC3816
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
junction temperature range, otherwise specifications are at T A = 25°C. V IN = 12V, BSOURCE = EXTV CC = 0V, VR ON = 5V, unless
otherwise noted. (Notes 2, 3)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VID, DPRSLPVR, LFF Parameters
V IL(VID)
V IH(VID)
VID Input Low Threshold
VID Input High Threshold
0.7
0.3
V
V
I VID
V DPRSLPVR
I LFF
V LFF
VID Input Leakage Current
DPRSLPVR Input Threshold
LFF Pull-Up Current
LFF Input Threshold
0V ≤ V VID ≤ 5V
V IMON = INTV CC (IMVP-6 Configuration)
V LFF = 0V
1.6
–1
1
±1
μA
V
μA
V
PWRGD, CLKEN#, VRTT#
V PWRGD
I LEAK
V OL
t PWRGD
Positive Power Good Threshold
Negative Power Good Threshold
PWRGD, CLKEN# Leakage Current
VRTT# Leakage Current
PWRGD, CLKEN# Output Low Voltage
VRTT# Output Low Voltage
PWRGD Glitch Filter
With Respect to VID V CC(CORE)
V PWRGD = V CLKEN# = 5V
V VRTT# = 3.3V
I OUT = 2mA
I OUT = 20mA
Power Good to Power Bad
150
–240
175
–270
0.1
0.075
750
200
–300
10
100
0.3
0.18
mV
mV
μA
μA
V
V
μs
t CLKEN#
t CLK(PWRGD)
CLKEN# Falling Edge Delay
CLKEN# to PWRGD Rising Edge Delay
Rising V BOOT Edge to CLKEN#
Falling Edge
l
l
50
5
75
10
100
20
μs
ms
t VR(PWRGD)
VR ON to PWRGD Falling Edge Delay
VR ON Falling Edge
100
ns
Note 1: Stresses beyond those listed under Absolute Maximum
Ratings may cause permanent damage to the device. Exposure to any
Absolute Maximum Rating condition for extended periods may affect
device reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of
device pins are negative. All voltages are referenced to ground unless
otherwise specified.
Note 3: The LTC3816 is tested under pulse load conditions such that
T J ≈ T A . The LTC3816E is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 125°C operating
junction temperature range are assured by design, characterization and
correlation with statistical process controls. LTC3816I specifications are
guaranteed over the full –40°C to 125°C operating junction temperature
range. Note that the maximum ambient temperature consistent with
these specifications is determined by specific operating conditions in
conjunction with board layout, the rated package thermal impedance
and other environmental factors. T J is calculated from the ambient
temperature, T A , and power dissipation, P D , according to the following
formula,
Note 4: The dynamic input supply current is a function of the power
MOSFET gate charging (Q G ? f OSC ). See Applications Information for
more information.
Note 5: The LTC3816 is measured in a feedback loop that adjusts
V CC(SEN) – V SS(SEN) to achieve a specified COMP pin voltage. The AITC
amplifier is configured as an inverter with gain = –1.
Note 6: Guaranteed by design, not subject to test.
Note 7: On-resistance limit is guaranteed by design and correlation
with statistical process controls.
Note 8: The LTC3816 includes overtemperature protection that is
intended to protect the device during momentary overload conditions.
The maximum rated junction temperature will be exceeded when this
protection is active. Continuous operation above the specified absolute
maximum operating junction temperature may impair device reliability
or permanently damage the device.
LTC3816EFE: T J = T A + (P D ? 29°C/W)
LTC3816EUHF: T J = T A + (P D ? 34°C/W)
3816f
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