参数资料
型号: LTC3834EUFD#TRPBF
厂商: Linear Technology
文件页数: 20/28页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 20-QFN
标准包装: 2,500
PWM 型: 电流模式
输出数: 1
频率 - 最大: 580kHz
占空比: 99.4%
电源电压: 4 V ~ 36 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 20-WFQFN 裸露焊盘
包装: 带卷 (TR)
LTC3834
APPLICATIONS INFORMATION
Table 2 summarizes the different states in which the
PLLLPF pin can be used.
Although all dissipative elements in the circuit produce
losses, four main sources usually account for most of the
Table 2
PLLLPF PIN
0V
Floating
INTV CC
RC Loop Filter
PLLIN/MODE PIN
DC Voltage
DC Voltage
DC Voltage
Clock Signal
FREQUENCY
250kHz
400kHz
530kHz
Phase-Locked to External Clock
losses in LTC3834 circuits: 1) IC V IN current, 2) INTV CC
regulator current, 3) I 2 R losses, 4) Topside MOSFET
transition losses.
1. The V IN current has two components: the ?rst is the
DC supply current given in the Electrical Characteristics
table, which excludes MOSFET driver and control cur-
rents; the second is the current drawn from the 3.3V
Minimum On-Time Considerations
Minimum on-time, t ON(MIN) , is the smallest time duration
that the LTC3834 is capable of turning on the top MOSFET.
It is determined by internal timing delays and the gate
charge required to turn on the top MOSFET. Low duty
cycle applications may approach this minimum on-time
limit and care should be taken to ensure that
linear regulator output. V IN current typically results in
a small (< 0.1%) loss.
2. INTV CC current is the sum of the MOSFET driver and
control currents. The MOSFET driver current results
from switching the gate capacitance of the power
MOSFETs. Each time a MOSFET gate is switched from
low to high to low again, a packet of charge dQ moves
t ON ( MIN ) <
V OUT
V IN ( f )
from INTV CC to ground. The resulting dQ/dt is a cur-
rent out of INTV CC that is typically much larger than the
control circuit current. In continuous mode, I GATECHG
If the duty cycle falls below what can be accommodated
by the minimum on-time, the controller will begin to skip
cycles. The output voltage will continue to be regulated,
but the ripple voltage and current will increase.
The minimum on-time for the LTC3834 is approximately
200ns. However, as the peak sense voltage decreases
the minimum on-time gradually increases up to about
250ns. This is of particular concern in forced continuous
applications with low ripple current at light loads. If the
duty cycle drops below the minimum on-time limit in this
situation, a signi?cant amount of cycle skipping can occur
with correspondingly larger current and voltage ripple.
Ef?ciency Considerations
The percent ef?ciency of a switching regulator is equal to
the output power divided by the input power times 100%.
It is often useful to analyze individual losses to determine
what is limiting the ef?ciency and which change would
produce the most improvement. Percent ef?ciency can
be expressed as:
%Ef?ciency = 100% – (L1 + L2 + L3 + ...)
where L1, L2, etc. are the individual losses as a percent-
age of input power.
20
= f(Q T + Q B ), where Q T and Q B are the gate charges of
the topside and bottom side MOSFETs.
Supplying INTV CC power through the EXTV CC switch
input from an output-derived source will scale the V IN
current required for the driver and control circuits by
a factor of (Duty Cycle)/(Ef?ciency). For example, in a
20V to 5V application, 10mA of INTV CC current results
in approximately 2.5mA of V IN current. This reduces
the mid-current loss from 10% or more (if the driver
was powered directly from V IN ) to only a few percent.
3. I 2 R losses are predicted from the DC resistances of the
fuse (if used), MOSFET, inductor, current sense resis-
tor, and input and output capacitor ESR. In continuous
mode the average output current ?ows through L and
R SENSE , but is “chopped” between the topside MOSFET
and the synchronous MOSFET. If the two MOSFETs have
approximately the same R DS(ON) , then the resistance
of one MOSFET can simply be summed with the resis-
tances of L, R SENSE and ESR to obtain I 2 R losses. For
example, if each R DS(ON) = 30mΩ, R L = 50mΩ, R SENSE
= 10mΩ and R ESR = 40mΩ (sum of both input and
output capacitance losses), then the total resistance
is 130mΩ. This results in losses ranging from 3% to
13% as the output current increases from 1A to 5A for
3834fb
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