参数资料
型号: LTC3855IUJ#PBF
厂商: Linear Technology
文件页数: 22/44页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 40-QFN
标准包装: 61
系列: PolyPhase®
PWM 型: 电流模式
输出数: 2
频率 - 最大: 850kHz
占空比: 95%
电源电压: 4.5 V ~ 38 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 40-WFQFN 裸露焊盘
包装: 管件
LTC3855
APPLICATIONS INFORMATION
( I MAX ) ( ) R DS ( ON ) +
P MAIN =
V OUT 2
( V IN ) ? ? MAX ? ? ( R DR )( C MILLER ) ?
? ?
?
? ? f OSC
+
( I MAX ) ( ) R DS ( ON )
P SYNC =
V IN – V OUT 2
t SOFTSTART = 0.6 ?
The MOSFET power dissipations at maximum output
current are given by:
1 + D
V IN
2 ? I ?
2
1 1
? ?
? V INTVCC – V TH ( MIN ) V T H ( MIN ) ?
1 + D
V IN
where D is the temperature dependency of R DS(ON) and
R DR (approximately 2?) is the effective driver resistance
at the MOSFET’s Miller threshold voltage. V TH(MIN) is the
typical MOSFET minimum threshold voltage.
Both MOSFETs have I 2 R losses while the topside N-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For V IN < 20V
the high current efficiency generally improves with larger
MOSFETs, while for V IN > 20V the transition losses rapidly
increase to the point that the use of a higher R DS(ON) device
with lower C MILLER actually provides higher efficiency. The
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during
a short-circuit when the synchronous switch is on close
to 100% of the period.
The term (1 + D ) is generally given for a MOSFET in the
form of a normalized R DS(ON) vs Temperature curve, but
D = 0.005/°C can be used as an approximation for low
voltage MOSFETs.
The optional Schottky diodes conduct during the dead time
between the conduction of the two power MOSFETs. These
prevent the body diodes of the bottom MOSFETs from turn-
ing on, storing charge during the dead time and requiring
a reverse recovery period that could cost as much as 3%
in efficiency at high V IN . A 1A to 3A Schottky is generally
a good compromise for both regions of operation due to
the relatively small average current. Larger diodes result
in additional transition losses due to their larger junction
capacitance. A Schottky diode in parallel with the bottom
FET may also provide a modest improvement in Burst
Mode efficiency.
Soft-Start and Tracking
The LTC3855 has the ability to either soft-start by itself
with a capacitor or track the output of another channel or
external supply. When one particular channel is configured
to soft-start by itself, a capacitor should be connected to
its TK/SS pin. This channel is in the shutdown state if its
RUN pin voltage is below 1.2V. Its TK/SS pin is actively
pulled to ground in this shutdown state.
Once the RUN pin voltage is above 1.2V, the channel pow-
ers up. A soft-start current of 1.2μA then starts to charge
its soft-start capacitor. Note that soft-start or tracking is
achieved not by limiting the maximum output current of
the controller but by controlling the output ramp voltage
according to the ramp rate on the TK/SS pin. Current
foldback is disabled during this phase to ensure smooth
soft-start or tracking. The soft-start or tracking range is
defined to be the voltage range from 0V to 0.6V on the
TK/SS pin. The total soft-start time can be calculated as:
C SS
1.2 μ A
Regardless of the mode selected by the MODE/PLLIN pin,
the regulator will always start in pulse-skipping mode
up to TK/SS = 0.5V. Between TK/SS = 0.5V and 0.54V, it
will operate in forced continuous mode and revert to the
selected mode once TK/SS > 0.54V. The output ripple
is minimized during the 40mV forced continuous mode
window ensuring a clean PGOOD signal.
When the channel is configured to track another supply,
the feedback voltage of the other supply is duplicated by
a resistor divider and applied to the TK/SS pin. Therefore,
the voltage ramp rate on this pin is determined by the
ramp rate of the other supply’s voltage. Note that the small
soft-start capacitor charging current is always flowing,
3855f
  
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