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参数资料
| 型号： | LTC3858EUH-2#TRPBF |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 稳压器 |
| 英文描述： | DUAL SWITCHING CONTROLLER, 900 kHz SWITCHING FREQ-MAX, PQCC32 |
| 封装： | 5 X 5 MM, LEAD FREE, PLASTIC, MO-220WHHD, QFN-32 |
| 文件页数： | 11/40页 |
| 文件大小： | 432K |
| 代理商： | LTC3858EUH-2#TRPBF |
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LTC3858-2
19
38582f
APPLICATIONS INFORMATION
Power MOSFET and Schottky Diode (Optional)
Selection
Two external power MOSFETs must be selected for each
controller in the LTC3858-2: one N-channel MOSFET for
the top (main) switch, and one N-channel MOSFET for the
bottom (synchronous) switch.
The peak-to-peak drive levels are set by the INTVCC voltage.
This voltage is typically 5.2V during start-up (see EXTVCC
Pin Connection). Consequently, logic-level threshold
MOSFETs must be used in most applications. The only
exception is if low input voltage is expected (VIN < 4V);
then, sub-logic level threshold MOSFETs (VGS(TH) < 3V)
should be used. Pay close attention to the BVDSS speci-
fication for the MOSFETs as well; many of the logic-level
MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the
on-resistance, RDS(ON), Miller capacitance, CMILLER, input
voltage and maximum output current. Miller capacitance,
CMILLER, can be approximated from the gate charge curve
usually provided on the MOSFET manufacturers’ data
sheet. CMILLER is equal to the increase in gate charge
along the horizontal axis while the curve is approximately
flat divided by the specified change in VDS. This result is
then multiplied by the ratio of the application applied VDS
to the gate charge curve specified VDS. When the IC is
operating in continuous mode the duty cycles for the top
and bottom MOSFETs are given by:
Main Switch Duty Cycle =
VOUT
VIN
Synchronous Switch Duty Cycle =
VIN VOUT
VIN
The MOSFET power dissipations at maximum output
current are given by:
PMAIN =
VOUT
VIN
IMAX
()
2 1+ δ
()RDS(ON) +
VIN
()
2 IMAX
2
RDR
() CMILLER
()
1
VINTVCC –VTHMIN
+
1
VTHMIN
f
()
PSYNC =
VIN –VOUT
VIN
IMAX
()
2 1+ δ
()RDS(ON)
where δ is the temperature dependency of RDS(ON) and
RDR (approximately 2Ω) is the effective driver resistance
at the MOSFET’s Miller threshold voltage. VTHMIN is the
typical MOSFET minimum threshold voltage.
Both MOSFETs have I2R losses while the topside N-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For VIN < 20V
the high current efficiency generally improves with larger
MOSFETs, while for VIN > 20V the transition losses rapidly
increase to the point that the use of a higher RDS(ON) device
with lower CMILLER actually provides higher efficiency. The
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during
a short-circuit when the synchronous switch is on close
to 100% of the period.
The term (1+ δ) is generally given for a MOSFET in the
form of a normalized RDS(ON) vs Temperature curve, but
δ = 0.005/°C can be used as an approximation for low
voltage MOSFETs.
The optional Schottky diodes D3 and D4 shown in Figure 13
conduct during the dead-time between the conduction of
the two power MOSFETs. This prevents the body diode of
the bottom MOSFET from turning on, storing charge during
the dead-time and requiring a reverse recovery period that
could cost as much as 3% in efficiency at high VIN. A 1A
to 3A Schottky is generally a good compromise for both
regions of operation due to the relatively small average
current. Larger diodes result in additional transition losses
due to their larger junction capacitance.
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