- 您现在的位置：买卖IC网 > PDF目录15252 > LTC3890EUH#TRPBF (Linear Technology)IC REG CTRLR BUCK PWM CM 32-QFN PDF资料下载
参数资料
| 型号： | LTC3890EUH#TRPBF |
| 厂商： | Linear Technology |
| 文件页数： | 18/40页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM 32-QFN |
| 产品培训模块： | LTC3890 - 60V Low IQ, Dual, 2-Phase Synchronous Step-Down DC/DC Controller |
| 标准包装： | 2,500 |
| 系列： | PolyPhase® |
| PWM 型： | 电流模式 |
| 输出数： | 2 |
| 频率 - 最大： | 850kHz |
| 占空比： | 99% |
| 电源电压： | 4 V ~ 60 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 32-WFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页当前第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页
LTC3890
APPLICATIONS INFORMATION
V OUT
V IN ? V OUT
( I MAX ) 2 ( 1 + δ ) R DS(ON) +
P MAIN =
( V IN ) 2 ? MAX ? ( R DR ) ( C MILLER ) ?
? ( )
( I MAX ) 2 ( 1 + δ ) R DS(ON)
V – V OUT
Thepeak-to-peakdrivelevelsaresetbytheINTV CC voltage.
This voltage is typically 5.1V during start-up (see EXTV CC
Pin Connection). Consequently, logic-level threshold
MOSFETs must be used in most applications. Pay close
attention to the BV DSS specification for the MOSFETs as well.
Selection criteria for the power MOSFETs include the
on-resistance, R DS(ON) , Miller capacitance, C MILLER , input
voltage and maximum output current. Miller capacitance,
C MILLER , can be approximated from the gate charge curve
usually provided on the MOSFET manufacturers’ data
sheet. C MILLER is equal to the increase in gate charge
along the horizontal axis while the curve is approximately
flat divided by the specified change in V DS . This result is
then multiplied by the ratio of the application applied V DS
to the gate charge curve specified V DS . When the IC is
operating in continuous mode the duty cycles for the top
and bottom MOSFETs are given by:
Main Switch Duty Cycle =
V IN
Synchronous Switch Duty Cycle =
V IN
The MOSFET power dissipations at maximum output
current are given by:
V OUT
V IN
? I ?
? 2 ?
? 1 1 ?
? + f
? V INTVCC – V THMIN V THMIN ?
P SYNC = IN
V IN
where δ is the temperature dependency of R DS(ON) and
R DR (approximately 2Ω) is the effective driver resistance
at the MOSFET’s Miller threshold voltage. V THMIN is the
typical MOSFET minimum threshold voltage.
Both MOSFETs have I 2 R losses while the topside N-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For V IN < 20V
the high current efficiency generally improves with larger
MOSFETs, while for V IN > 20V the transition losses rapidly
increase to the point that the use of a higher R DS(ON) device
with lower C MILLER actually provides higher efficiency. The
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during
a short-circuit when the synchronous switch is on close
to 100% of the period.
The term (1+ δ ) is generally given for a MOSFET in the
form of a normalized R DS(ON) vs Temperature curve, but
δ = 0.005/°C can be used as an approximation for low
voltage MOSFETs.
The optional Schottky diodes D3 and D4 shown in
Figure 11 conduct during the dead-time between the
conduction of the two power MOSFETs. This prevents
the body diode of the bottom MOSFET from turning on,
storing charge during the dead-time and requiring a
reverse recovery period that could cost as much as 3%
in efficiency at high V IN . A 1A to 3A Schottky is generally
a good compromise for both regions of operation due
to the relatively small average current. Larger diodes
result in additional transition losses due to their larger
junction capacitance.
C IN and C OUT Selection
The selection of C IN is simplified by the 2-phase architec-
ture and its impact on the worst-case RMS current drawn
through the input network (battery/fuse/capacitor). It can be
shown that the worst-case capacitor RMS current occurs
when only one controller is operating. The controller with
the highest (V OUT )(I OUT ) product needs to be used in the
formula shown in Equation 1 to determine the maximum
3890fc
18
相关PDF资料 |
PDF描述 |
|---|---|
| RSC15DRXS-S734 | CONN EDGECARD 30POS DIP .100 SLD |
| RBC17DRST-S273 | CONN EDGECARD 34POS DIP .100 SLD |
| VE-B7Y-EY-F2 | CONVERTER MOD DC/DC 3.3V 33W |
| ABM08DTMS-S189 | CONN EDGECARD 16POS R/A .156 SLD |
| GBA50DCBI | CONN EDGECARD 100PS R/A .125 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LTC3890HGN-1#PBF | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:PolyPhase® 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC3890HGN-1#TRPBF | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:PolyPhase® 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC3890HGN-3#PBF | 制造商:Linear Technology 功能描述:IC REG CTRLR BUCK PWM CM 28SSOP 制造商:Linear Technology 功能描述:DC-DC CONTROLLER BUCK 900KHZ 制造商:Linear Technology 功能描述:BUCK DUAL CNTRL 4-60V 850K 制造商:Linear Technology 功能描述:DC-DC CONTROLLER, BUCK, 900KHZ, SSOP-28 制造商:Linear Technology 功能描述:DC-DC CONTROLLER, BUCK, 900KHZ, SSOP-28; Primary Input Voltage:60V; No. of Outputs:2; No. of Pins:28; Operating Temperature Min:-40C; Operating Temperature Max:150C; Operating Temperature Range:-40C to +150C ;RoHS Compliant: Yes |
| LTC3890HGN-3#TRPBF | 制造商:Linear Technology 功能描述:IC REG CTRLR BUCK PWM CM 28SSOP |
| LTC3890HUH#PBF | 功能描述:IC REG CTRLR BUCK PWM CM 32-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:PolyPhase® 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
发布紧急采购，3分钟左右您将得到回复。