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| 型号： | LTC4006EGN-2#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 17/20页 |
| 文件大小： | 0K |
| 描述： | IC CHARGER BATTERY 4A 16-SSOP |
| 标准包装： | 100 |
| 功能： | 充电管理 |
| 电池化学： | 锂离子（Li-Ion） |
| 电源电压： | 6 V ~ 28 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SSOP |
| 包装： | 管件 |
| 产品目录页面： | 1341 (CN2011-ZH PDF) |
LTC4006
APPLICATIO S I FOR ATIO
V IN
Q1A
100k
selection. If the V IN supply is going to collapse very slowly
such that Q1B is not turned on quickly enough for the given
load and stay within its P D limits, you should install a suit-
able Schottky diode in parallel with Q1B.
PCB Layout Considerations
ZENER
18V
V OUT
For maximum efficiency, the switch node rise and fall times
should be minimized. To prevent magnetic and electrical
TGATE
INDUCTOR
R SENSE
Q1B
V BAT
field radiation and high frequency resonant problems,
proper layout of the components connected to the IC is
essential. (See Figure 13.) Here is a PCB layout priority list
for proper layout. Layout the PCB using this specific order.
1. Input capacitors need to be placed as close as possible
4006 F12
Figure 12. Optional Simple High
Efficiency Battery Discharge Path
0V keeping Q1B in the off state while P-channel MOSFET
Q1A is on. If V IN were to suddenly go away, Q1B internal
diode will provide a passive but instant discharge path for
battery current to reach V OUT and hold up the load. Q1B
internal diode has the same current rating as the FET itself,
but has a very high V f of about a volt such that heat will
quickly build up in Q1B if left alone. However as V IN ’s voltage
falls below V BAT by Q1B’s V GS threshold, Q1B will then turn
on shorting out its internal diode removing both the heat
and voltage losses created by the diode. When V IN falls to
zero volts, Q1B gate will be driven to the same voltage as
V BAT providing the lowest possible RDS ON value. A zener
diode along with a 100k resistor in series with the Q1B gate
protects the gate from any hazardous voltage spikes that
to switching FET’s supply and ground connections.
Shortest copper trace connections possible. These
parts must be on the same layer of copper. Vias must
not be used to make this connection.
2. The control IC needs to be close to the switching FET’s
gate terminals. Keep the gate drive signals short for a
cleanFETdrive.ThisincludesICsupplypinsthatcon-
nect to the switching FET source pins. The IC can be
placed on the opposite side of the PCB relative to above.
3. Place inductor input as close as possible to switching
FET’s output connection. Minimize the surface area of
this trace. Make the trace width the minimum amount
needed to support current—no copper fills or pours.
Avoid running the connection using multiple layers in
parallel. Minimize capacitance from this node to any
other trace or plane.
can exceed Q1B maximum permissible V GS voltage. The
zener voltage rating must be less than Q1B V GS(MAX) volt-
SWITCH NODE
L1
V BAT
age but greater than V BAT .
Since Q1A and Q1B are always at opposite states and share
the same load, it is often advantagous to combine both FETs
V IN
C2
HIGH
FREQUENCY
CIRCULATING
PATH
D1
C3
BAT
into a single package and save PCB space. The P D rate of
the FET that is on is enhanced when the other FET is off. The
choice of a combined Q1 should take into account the high-
est load current conditions of both paths and choose
Figure 13. High Speed Switching Path
4006 F13
whichever is greater as the driving force behind the MOSFET
4006fa
17
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参数描述 |
|---|---|
| LTC4006EGN-4 | 功能描述:IC CHARGER BATTERY 4A 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 功能:电池监控器 电池化学:碱性，锂离子，镍镉，镍金属氢化物 电源电压:1 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:SOT-23-6 供应商设备封装:SOT-6 包装:带卷 (TR) |
| LTC4006EGN-4#PBF | 功能描述:IC CHARGER BATTERY 4A 16-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 标准包装:2,000 系列:Impedance Track™ 功能:燃料，电量检测计/监控器 电池化学:锂离子（Li-Ion） 电源电压:2.4 V ~ 2.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:20-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:20-TSSOP 包装:带卷 (TR) 产品目录页面:1020 (CN2011-ZH PDF) 配用:BQ27350EVM-ND - BQ27350EVM 其它名称:296-21665-2 |
| LTC4006EGN-4#TR | 功能描述:IC BATT CHGR CC/CV LI-ION 16SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 功能:电池监控器 电池化学:碱性，锂离子，镍镉，镍金属氢化物 电源电压:1 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:SOT-23-6 供应商设备封装:SOT-6 包装:带卷 (TR) |
| LTC4006EGN-4#TRPBF | 功能描述:IC CHARGER BATTERY 4A 16-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 功能:电池监控器 电池化学:碱性，锂离子，镍镉，镍金属氢化物 电源电压:1 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:SOT-23-6 供应商设备封装:SOT-6 包装:带卷 (TR) |
| LTC4006EGN-6 | 功能描述:IC CHARGER BATTERY 4A 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 功能:电池监控器 电池化学:碱性，锂离子，镍镉，镍金属氢化物 电源电压:1 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:SOT-23-6 供应商设备封装:SOT-6 包装:带卷 (TR) |
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