参数资料
型号: LTC4210-4IS6
厂商: LINEAR TECHNOLOGY CORP
元件分类: 电源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
封装: PLASTIC, MO-193, TSOT-23, 6 PIN
文件页数: 6/16页
文件大小: 216K
代理商: LTC4210-4IS6
14
LTC4210-3/LTC4210-4
421034fa
APPLICATIO S I FOR ATIO
WU
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Table 1. tINITIAL, tCBDELAY, tCOOLOFF vs CTIMER
CTIMER (F)
tINITIAL (ms)
tCBDELAY (ms)
tCOOLOFF (ms)
0.033
9.0
0.7
18.2
0.047
12.8
1
25.9
0.068
18.6
1.5
37.4
0.082
22.4
1.8
45.1
0.1
27.3
2.2
55
0.22
60.0
4.8
121
0.33
90.1
7.2
181.5
0.47
128.3
10.2
258.5
0.68
185.6
14.7
374
0.82
223.8
17.8
451
1
272.9
21.7
550
2.2
600.5
47.7
1210
3.3
900.7
71.5
1815
Power-Off Cycle
The system can be reset by toggling the ON pin low for
more than 30
s as shown at time point 7 of Figure 3. The
GATE pin is pulled to ground. The TIMER capacitor is also
discharged to ground. CLOAD discharges through the load.
Alternatively, the TIMER pin can be externally driven above
the COMP2 threshold to turn off the GATE pin.
POWER MOSFET SELECTION
Power MOSFETs can be classified by RDSON at VGS gate
drive ratings of 10V, 4.5V, 2.5V and 1.8V. Use the typical
curves
VGATE vs Supply Voltage and VGATE vs Tem-
perature to determine whether the gate drive voltage is
adequate for the selected MOSFET at the operating volt-
age.
In addition, the selected MOSFET should fulfill two VGS
criteria:
1. Positive VGS absolute maximum rating > LTC4210-3/
LTC4210-4 maximum
VGATE, and
2. Negative VGS absolute maximum rating > supply
voltage. The gate of the MOSFET can discharge faster
than VOUT when shutting down the MOSFET with a large
CLOAD.
If one of the conditions cannot be met, an external Zener
clamp shown on Figure 10a or Figure 10b can be used. The
selection of RG should be within the allowed LTC4210
package dissipation when discharging VOUT via the Zener
clamp.
In addition to the MOSFET gate drive rating and VGS
absolute maximum rating, other criteria such as VBDSS,
ID(MAX), RDS(ON), PD, θJA, TJ(MAX) and maximum safe
operating area should also be carefully reviewed. VBDSS
should exceed the maximum supply voltage inclusive of
spikes and ringing. ID(MAX) should be greater than the
current limit, ILIMIT. RDS(ON) determines the MOSFET VDS
which together with VCB yields an error in the VOUT voltage.
At 2.7V supply voltage, the total of VDS + VCB of 0.1V yields
3.7% VOUT error.
The maximum power dissipated in the MOSFET is
ILIMIT2 RDS(ON) and this should be less than the maxi-
mum power dissipation, PD allowed in that package.
Given power dissipation, the MOSFET junction tempera-
ture, TJ can be computed from the operating temperature
(TA) and the MOSFET package thermal resistance (θJA).
The operating TJ should be less than the TJ(MAX) specifi-
cation.
Next review the short-circuit condition under maximum
supply VIN(MAX) conditions and maximum current limit,
ILIMIT(MAX) during the circuit breaker time-out interval of
tCBDELAY with the maximum safe operating area of the
MOSFET. The operation during output short-circuit condi-
tions must be well within the manufacturer’s recom-
mended safe operating region with sufficient margin. To
ensure a reliable design, fault tests should be evaluated in
the laboratory.
VIN TRANSIENT PROTECTION
Unlike most circuits, Hot Swap controllers typically are
not allowed the good engineering practice of supply
bypass capacitors, since controlling the surge current to
bypass capacitors at plug-in is the primary motivation for
the Hot Swap controller. Although wire harness, back-
plane and PCB trace inductances are usually small, these
can create spikes when currents are suddenly drawn, cut-
off or limited. The transient associated with the GATE turn
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