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| 型号： | LTC4211CMS |
| 厂商： | Linear Technology |
| 文件页数： | 23/40页 |
| 文件大小： | 321K |
| 描述： | IC CONTROLLER HOT SWAP 10-MSOP |
| 标准包装： | 50 |
| 类型： | 热交换控制器 |
| 应用： | 通用 |
| 内部开关： | 无 |
| 电源电压： | 2.5 V ~ 16.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 管件 |
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LTC4211
23
4211fb
OPERATION
The maximum load current that trips the circuit breaker
is given in Equation 12.
TRIP(MAX)
=
V
CB(MAX)
R
SENSE MIN
=
60mV
R
SENSE MIN
(12)
where
R
SENSE(MIN)
=R
SENSE(NOM)
1
R
TOL
100
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
For example:
If a sense resistor with 7m??% R
TOL
is used for current
limiting, the nominal trip current I
TRIP(NOM)
= 7.1A. From
Equations 11 and 12, I
TRIP(MIN)
= 5.4A and I
TRIP(MAX)
=
9.02A respectively.
For proper operation and to avoid the circuit breaker trip-
ping unnecessarily, the minimum trip current (I
TRIP(MIN)
)
must exceed the circuits maximum operating load current.
For reliability purposes, the operation at the maximum
trip current (I
TRIP(MAX)
) must be evaluated carefully. If
necessary, two resistors with the same R
TOL
can be con-
nected in parallel to yield an R
SENSE(NOM)
value that fits
the circuit requirements.
POWER MOSFET SELECTION CRITERIA
To start the power MOSFET selection process, choose the
maximum drain-to-source voltage, V
DS(MAX)
, and the maxi-
mum drain current, I
D(MAX)
of the MOSFET. The V
DS(MAX)
rating must exceed the maximum input supply voltage
(including surges, spikes, ringing, etc.) and the I
D(MAX)
rating must exceed the maximum short-circuit current in
the system during a fault condition. In addition, consider
three other key parameters: 1) the required gate-source
(V
GS
) voltage drive, 2) the voltage drop across the drain-
to-source on resistance, R
DS(ON)
and 3) the maximum
junction temperature rating of the MOSFET.
Power MOSFETs are classified into three categories:
standard MOSFETs (R
DS(ON)
specified at V
GS
= 10V)
logic-level MOSFETs (R
DS(ON)
specified at V
GS
= 5V), and
sub-logic-level MOSFETs (R
DS(ON)
specified at V
GS
= 2.5V).
The absolute maximum rating for V
GS
is typically ?0V for
standard MOSFETs. However, the V
GS
maximum rating for
logic-level MOSFETs ranges from ?V to ?0V depend-
ing upon the manufacturer and the specific part number.
The LTC4211s GATE overdrive as a function of V
CC
is
illustrated in the Typical Performance curves. Logic-level
and sub-logic-level MOSFETs are recommended for low
supply voltage applications and standard MOSFETs can
be used for applications where supply voltage is greater
than 4.75V.
Note that in some applications, the gate of the external
MOSFET can discharge faster than the output voltage
when the circuit breaker is tripped. This causes a nega-
tive V
GS
voltage on the external MOSFET. Usually, the
selected external MOSFET should have a 盫
GS(MAX)
rat-
ing that is higher than the operating input supply voltage
to ensure that the external MOSFET is not destroyed by
a negative V
GS
voltage. In addition, the 盫
GS(MAX)
rating
of the MOSFET must be higher than the gate overdrive
voltage. Lower 盫
GS(MAX)
rating MOSFETs can be used
with the LTC4211 if the GATE overdrive is clamped to a
lower voltage. The circuit in Figure 12 illustrates the use
of Zener diodes to clamp the LTC4211s GATE overdrive
signal if lower voltage MOSFETs are used.
Figure 12. Optional Gate Clamp for Lower V
GS(MAX)
MOSFETs
V
CC
V
OUT
*USER SELECTED VOLTAGE CLAMP
(A LOW BIAS CURRENT ZENER DIODE IS RECOMMENDED)
1N4688 (5V)
1N4692 (7V): LOGIC-LEVEL MOSFET
1N4695 (9V)
1N4702 (15V): STANDARD-LEVEL MOSFET
4211 F12
R
SENSE
GATE
D2*
D1*
Q1
R
G
200?/DIV>
The R
DS(ON)
of the external pass transistor should be low
to make its drain-source voltage (V
DS
) a small percentage
of V
CC
. At a V
CC
= 2.5V, V
DS
+ V
RSENSE
= 0.1V yields 4%
error at the output voltage. This restricts the choice of
MOSFETs to very low R
DS(ON)
. At higher V
CC
voltages, the
V
DS
requirement can be relaxed in which case MOSFET
package dissipation (P
D
and T
J
) may limit the value of
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相关代理商/技术参数 |
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|---|---|
| LTC4211CMS#PBF | 功能描述:IC CONTROLLER HOT SWAP 10-MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:119 系列:- 类型:热交换控制器 应用:通用型，PCI Express? 内部开关:无 电流限制:- 电源电压:3.3V，12V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:80-TQFP 供应商设备封装:80-TQFP（12x12） 包装:托盘 产品目录页面:1423 (CN2011-ZH PDF) |
| LTC4211-CMS#PBF | 制造商:LINEAR 功能描述: 制造商:Linear Technology 功能描述: |
| LTC4211CMS#TR | 功能描述:IC CONTROLLER HOT SWAP 10-MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 标准包装:50 系列:- 类型:热交换控制器 应用:-48V 远程电力系统，AdvancedTCA ? 系统，高可用性 内部开关:无 电流限制:可调 电源电压:11.5 V ~ 14.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 供应商设备封装:10-MSOP 包装:管件 |
| LTC4211CMS#TRPBF | 功能描述:IC CONTROLLER HOT SWAP 10-MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 标准包装:50 系列:- 类型:热交换控制器 应用:-48V 远程电力系统，AdvancedTCA ? 系统，高可用性 内部开关:无 电流限制:可调 电源电压:11.5 V ~ 14.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 供应商设备封装:10-MSOP 包装:管件 |
| LTC4211CMS8 | 功能描述:IC CONTROLLER HOT SWAP 8-MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 标准包装:50 系列:- 类型:热交换控制器 应用:-48V 远程电力系统，AdvancedTCA ? 系统，高可用性 内部开关:无 电流限制:可调 电源电压:11.5 V ~ 14.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 供应商设备封装:10-MSOP 包装:管件 |
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