参数资料
型号: LTC4217IDHC-12#TR
厂商: LINEAR TECHNOLOGY CORP
元件分类: 电源管理
英文描述: 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO16
封装: 5 X 3 MM, PLASTIC, MO-229WJED-1, DFN-16
文件页数: 15/18页
文件大小: 238K
代理商: LTC4217IDHC-12#TR
LTC4217
6
4217fe
TEMPERATURE (°C)
–50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
–25
0
25
4217 G18
50
75
150
125
100
V ISET
(V)
TEMPERATURE (°C)
–50
105
100
95
90
85
80
–25
0
25
4217 G13
50
75
100
I MON
(A)
VDD = 3.3V, 12V, 24V
ILOAD = 2A
TEMPERATURE (°C)
–50
I GATE
PULL-UP
(A)
–26.0
–25.5
–25.0
–24.5
–24.0
–25
0
25
4217 G14
50
75
100
IGATE (A)
0
GATE
DRIVE
(V
GATE
V SOURCE
)(V)
7
6
5
4
3
2
1
–5
–10
–15
–20
4217 G15
–25
–30
VDD = 12V
VDD = 3.3V
VDD (V)
0
6.2
6.0
5.8
5.6
5.4
5.2
5
10
15
4217 G16
20
25
30
GATE
DRIVE
(V
GATE
V SOURCE
)(V)
TEMPERATURE (°C)
–50
6.15
6.14
6.13
6.12
6.11
6.10
–25
0
25
4217 G17
50
75
100
GATE
DRIVE
(V
GATE
V SOURCE
)(V)
ILOAD (mA)
0
PG,
FLT
V
OUT
LOW
(V)
14
12
10
8
6
4
2
4
6
8
4217 G12
10
12
FLT
PG
TEMPERATURE (°C)
–50
60
50
40
30
20
10
0
–25
0
25
4217 G10
50
75
100
R
ON
(m)
VDD = 3.3V, 12V, 24V
VDS (V)
0.1
0.01
I D
(A)
0.1
1
10
1
10
100
4217 G11
TA = 25°C
MULTIPLE PULSE
DUTY CYCLE = 0.2
DC
10s
100ms
10ms
1ms
1s
Typical perForMance characTerisTics
RON vs VDD and Temperature
MOSFET SOA Curve
IMON vs Temperature and VDD
Gate Pull-Up Current
vs Gate Drive
PG, FLT VOUT Low vs ILOAD
TA = 25°C, VDD = 12V unless otherwise noted.
GATE Pull-Up Current
vs Temperature
Gate Drive vs VDD
Gate Drive vs Temperature
VISET vs Temperature
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