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参数资料
| 型号： | LTC4224CDDB-2#TRMPBF |
| 厂商： | Linear Technology |
| 文件页数： | 12/16页 |
| 文件大小： | 220K |
| 描述： | IC CNTRLR HOT SWAP DUAL 10-DFN |
| 标准包装： | 1 |
| 类型： | 热交换控制器 |
| 应用： | 通用 |
| 内部开关： | 无 |
| 电源电压： | 1 V ~ 6 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN-EP（3x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1342 (CN2011-ZH PDF) |
| 其它名称： | LTC4224CDDB-2#TRMPBFDKR |
LTC4224-1/LTC4224-2
12
422412fa
APPLICATIONS INFORMATION
Next, assume that there is no load current at start-up,
and calculate the inrush current required to charge the
load capacitor. As there is no gate capacitor, the supplies
start-up in current limit. Compute the time, t
SU
, it takes
to fully charge the load capacitor:
t
SU
=
V
CC
"C
LOAD
I
TRIP
Table 3 lists the worst-case t
SU
values assuming 30%
tolerance for load capacitances.
Table 3. Worst-Case t
SU
VOLTAGE SUPPLY
t
SU(MIN)
t
SU(MAX)
5V
0.53ms
0.65ms
3.3V
0.23ms
0.29ms
The start-up ECB blanking delay is guaranteed to be at least
2.5ms, which is longer than the t
SU
tabulated in Table 3.
Hence, both supplies can start up successfully.
Next, verify that the thermal ratings of the selected external
MOSFETs are not exceeded during power-up or an output
short-circuit. Assuming the MOSFET dissipates power only
due to inrush current charging the load capacitor, the energy
dissipated in the MOSFET during power-up is the same
as that stored in the load capacitor after power-up. The
average power dissipated in the MOSFET is given by:
P
AVG
=
C
LOAD
" V
OUT
2
2" t
SU
The worst-case P
AVG
is calculated to be 4.6W for both the 5V
supply and the 3.3V supply. In this example, the FDS6911
MOSFET offers a good solution. Since this MOSFET is a dual
N-channel in a single SO8 package, it must be able to tolerate
the combined power dissipation of both supplies during
the t
SU
start-up time. The increase in steady-state junction
temperature due to power dissipated in the MOSFET is
擳 = P
AVG
"Z
TH
where Z
TH
is the thermal impedance.
Under this condition, the FDS6911 datasheets Transient
Thermal Impedance plot indicates that the junction tem-
perature will increase by 6.4癈 using Z
THJC
= 0.7癈/W
(single pulse). The FDS6911s on-resistance is 17m?at
V
GS
= 4.5V , 25癈.
The magnitude of the power pulse that results during a
severe overload is calculated to be 9.25W for the 5V sup-
ply and 9.2W for the 3.3V supply under the worst case
conditions. Assuming a worst-case circuit breaker timeout
period of 7.5ms, the junction temperature will increase by
25癈, with one supply short-circuited. If both supplies are
short-circuited, the junction temperature will increase by
50癈 in the worst-case. During auto-retry (LTC4224-2), in
the event of persistent faults at both supplies, the ample
four second cooling delay limits the increase in junction
temperature to 50癈. The SOA curves of the FDS6911
indicate that the above conditions are safe.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LTC4224CDDB-2-TRPBF | 制造商:LINER 制造商全称:Linear Technology 功能描述:Compact Dual Low Voltage Hot Swap Controller |
| LTC4224CMS-1#PBF | 功能描述:IC CTRLR HOT SWAP DUAL 10-MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
| LTC4224CMS-1#TRPBF | 功能描述:IC CNTRLR HOT SWAP DUAL 10-MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 热交换 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:100 系列:- 类型:热插拔开关 应用:通用 内部开关:是 电流限制:可调 电源电压:9 V ~ 13.2 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:10-WFDFN 裸露焊盘 供应商设备封装:10-TDFN-EP（3x3） 包装:管件 |
| LTC4224CMS-1-PBF | 制造商:LINER 制造商全称:Linear Technology 功能描述:Compact Dual Low Voltage Hot Swap Controller |
| LTC4224CMS-1-TRPBF | 制造商:LINER 制造商全称:Linear Technology 功能描述:Compact Dual Low Voltage Hot Swap Controller |
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