参数资料
型号: LTC4227IUFD-1#TRPBF
厂商: LINEAR TECHNOLOGY CORP
元件分类: 电源管理
英文描述: POWER SUPPLY MANAGEMENT CKT, PQCC20
封装: 4 X 5 MM, PLASTIC, MO-220, QFN-20
文件页数: 3/20页
文件大小: 307K
代理商: LTC4227IUFD-1#TRPBF
LTC4227-1/LTC4227-2
11
422712f
applicaTions inForMaTion
During a normal power-up, the ideal diode MOSFETs turn
onfirst.Assoonastheinternallygeneratedsupply,INTVCC,
rises above its 2.2V undervoltage lockout threshold, the
internal charge pump is allowed to charge up the CPO
pins. Because the ideal diode MOSFETs are connected
in parallel as a diode-OR, the SENSE+ pin voltage selects
the highest of the supplies at the IN1 and IN2 pins. The
MOSFET associated with the lower input supply voltage
will be turned off by the corresponding gate drive amplifier.
Before the Hot Swap MOSFET can be turned on, EN must
remainlowandONmustremainhighfora100msdebounce
cycle to ensure that any contact bounces during the inser-
tion have ceased. At the end of the debounce cycle, the
internal fault latches are cleared. The Hot Swap MOSFET
is then allowed to turn on by charging up HGATE with a
10A current source from the charge pump. The voltage
at the HGATE pin rises with a slope equal to 10A/CHG and
the supply inrush current flowing into the load capacitor,
CL, is limited to:
IINRUSH =
CL
CHG
10A
The OUT voltage follows the HGATE voltage when the Hot
Swap MOSFET turns on. If the voltage across the current
sense resistor, RS, becomes too high, the inrush current
willbelimitedbytheinternalcurrentlimitingcircuitry.Once
the MOSFET gate overdrive exceeds 4.2V, the PWRGD pin
pulls low to indicate that the power is good. Once OUT
reaches the input supply voltage, HGATE continues to
ramp up. An internal 12V clamp limits the HGATE voltage
above OUT.
When the ideal diode MOSFET is turned on, the gate drive
amplifier controls the gate of the MOSFET to servo the
forward voltage drop across the MOSFET to 25mV. If the
load current causes more than 25mV of drop, the MOSFET
gate is driven fully on and the voltage drop is equal to
ILOAD RDS(ON).
Turn-Off Sequence
The external MOSFETs can be turned off by a variety of
conditions. A normal turn-off for the Hot Swap MOSFET is
initiated by pulling the ON pin below its 1.155V threshold
(80mV ON pin hysteresis), or pulling the EN pin above
its 1.235V threshold. Additionally, an overcurrent fault
of sufficient duration to trip the circuit breaker also turns
off the Hot Swap MOSFET. Normally, the LTC4227 turns
off the MOSFET by pulling the HGATE pin to ground with
a 300A current sink.
All of the MOSFETs turn off when INTVCC falls below its
undervoltage lockout threshold (2.2V). The DGATE pin is
pulled down with a 100A current to one diode voltage
below the IN pin, while the HGATE pin is pulled down to
the OUT pin by a 200mA current. When D2ON is pulled
high above 1.235V, the ideal diode MOSFET in the IN2
supply path is turned off with DGATE2 pulled low by a
100A current.
The gate drive amplifier controls the ideal diode MOSFET
to prevent reverse current when the input supply falls
below SENSE+. If the input supply collapses quickly, the
gate drive amplifier turns off the MOSFET with a fast pull-
down circuit as soon as it detects that IN is 25mV below
SENSE+. If the input supply falls at a more modest rate,
the gate drive amplifier controls the MOSFET to maintain
SENSE+ at 25mV below IN.
Figure 2. Ideal Diode Controller Start-Up Waveforms
Figure 3. Hot Swap Controller Power-Up Sequence
VOLTAGE
10V/DIV
5ms/DIV
422712 F02
IN1
SENSE+
DGATE1
DGATE2
CP01
CP02
ON
5V/DIV
HGATE
10V/DIV
OUT
10V/DIV
PWRGD
10V/DIV
50ms/DIV
422712 F03
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