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参数资料
| 型号： | LTC4361CDC-2#TRMPBF |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封装： | 2 X 2 MM, LEAD FREE, PLASTIC, DFN-8 |
| 文件页数： | 10/16页 |
| 文件大小： | 327K |
| 代理商： | LTC4361CDC-2#TRMPBF |
LTC4361-1/LTC4361-2
3
436112fa
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND unless otherwise
specied.
The
l denotes the specications which apply over the full operating
temperature range, otherwise specications are at TA = 25°C. VIN = 5V, VON = 0V, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supplies
VIN
Input Voltage Range
l
2.5
80
V
VIN(UVL)
Input Undervoltage Lockout
VIN Rising
l
1.8
2.1
2.45
V
IIN
Input Supply Current
VON = 0V
l
220
400
μA
VON = 2.5V
l
1.5
10
μA
Thresholds
VIN(OV)
IN Pin Overvoltage Threshold
VIN Rising
l
5.684
5.8
5.916
V
VOV
Overvoltage Hysteresis
l
25
100
200
mV
VOC
Overcurrent Threshold
VIN – VSENSE
l
45
50
55
mV
External Gate Drive
VGATE
External N-Channel MOSFET Gate Drive
(VGATE – VOUT)
2.5V ≤ VIN < 3V, IGATE = –1μA
3V ≤ VIN < 5.5V, IGATE = –1μA
l
3.5
4.5
6
7.9
V
VGATE(TH)
GATE High Threshold for PWRGD Status VIN = 3.3V
VIN = 5V
l
5.7
6.7
6.3
7.2
6.8
7.8
V
IGATE(UP)
GATE Pull-Up Current
VGATE = 1V
l
–5
–10
–15
μA
VGATE(UP)
GATE Ramp-Up
VGATE = 1V to 7V
l
1.5
3
4.5
V/ms
IGATE(FST)
GATE Pull-Down Current
Fast Turn-Off, VIN = 6V, VGATE = 9V
l
15
30
60
mA
IGATE(DN)
GATE Pull-Down Current
VON = 2.5V, VGATE = 9V
l
10
40
80
μA
Input Pins
IOUT(IN)
OUT Input Current
VOUT = 5V, VON = 0V
VOUT = 5V, VON = 2.5V
l
510
0
20
±3
μA
VON(TH)
ON Input Threshold
l
0.4
1.5
V
ION
ON Pull-Down Current
VON = 2.5V
l
2.5
5
10
μA
Output Pins
VGATEP(CLP)
IN to GATEP Clamp Voltage
VIN = 8V to 80V
l
5
5.8
7.5
V
RGATEP
GATEP Resistive Pull-Down
VGATEP = 3V
l
0.8
2
3.2
MΩ
VPWRGD(OL)
PWRGD Output Low Voltage
VIN = 5V, IPWRGD = 3mA
l
0.23
0.4
V
RPWRGD
PWRGD Pull-Up Resistance to OUT
VIN = 6.5V, VPWRGD = 1V
l
250
500
800
kΩ
Delay
tON
GATE On Delay
VIN High to IGATE = –5μA
l
50
130
200
ms
tOFF
GATE Off Propagation Delay
VIN = Step 5V to 6.5V to PWRGD High
VIN – VSENSE = Step 0mV to 100mV
l
5
0.25
10
1
20
μs
tPWRGD
PWRGD Delay
VIN = Step 5V to 6.5V
VGATE > VGATE(TH) to PWRGD Low
l
25
0.25
65
1
100
μs
ms
tON(OFF)
ON High to GATE Off
VON = Step 0V to 2.5V
l
25
μs
Note 3: An internal clamp limits VGATE to a minimum of 4.5V above VOUT.
Driving this pin to voltages beyond this clamp may damage the device.
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