参数资料
型号: LTC4412IS6#TRMPBF
厂商: Linear Technology
文件页数: 3/12页
文件大小: 0K
描述: IC PWR PATH CNTRLR TSOT23-6
标准包装: 1
系列: PowerPath™
应用: 手持/移动设备
FET 型: P 沟道
输出数: 1
内部开关:
延迟时间 - 开启: 110µs
延迟时间 - 关闭: 13µs
电源电压: 2.5 V ~ 28 V
电流 - 电源: 16µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: TSOT-23-6
包装: 标准包装
产品目录页面: 1338 (CN2011-ZH PDF)
其它名称: LTC4412IS6#TRMPBFDKR
LTC4412
ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating
temperature range, unless otherwise noted specifications are at T A = 25 ° C, V IN = 12V, CTL and GND = 0V. Current into a pin is positive
and current out of a pin is negative. All voltages are referenced to GND, unless otherwise specified.
SYMBOL
I QCL
PARAMETER
Quiescent Supply Current at Low Supply
CONDITIONS
V IN = 3.6V, V SENSE = 0V, V CTL = 1V
MIN
TYP
7
MAX
13
UNITS
μ A
with CTL Active
I QCH
Quiescent Supply Current at High Supply
V IN = 28V, V SENSE = 0V, V CTL = 1V
12
20
μ A
with CTL Active
I LEAK
V IN and SENSE Pin Leakage Currents
V IN = 28V, V SENSE = 0V; V SENSE = 28V, V IN = 0V
–3
0
1
μ A
When Other Pin Supplies Power
PowerPath Controller
V IN = 14V, V SENSE = –14V; V SENSE = 14V, V IN = –14V
V FR
PowerPath Switch Forward Regulation
V IN – V SENSE , 2.5V ≤ V IN ≤ 28V
10
20
32
mV
Voltage
V RTO
PowerPath Switch Reverse Turn-Off
V SENSE – V IN , 2.5V ≤ V IN ≤ 28V
10
20
32
mV
Threshold Voltage
GATE and STAT Outputs
GATE Active Forward Regulation
(Note 4)
I G(SRC)
I G(SNK)
Source Current
Sink Current
–1
25
–2.5
50
–5
85
μ A
μ A
V G(ON)
GATE Clamp Voltage
Apply I GATE = 1 μ A, V IN = 12V,
6.3
7
7.7
V
V SENSE = 11.9V, Measure V IN – V GATE
V G(OFF)
GATE Off Voltage
Apply I GATE = – 5 μ A, V IN = 12V,
0.13
0.25
V
V SENSE = 12.1V, Measure V SENSE – V GATE
t G(ON)
t G(OFF)
GATE Turn-On Time
GATE Turn-Off Time
V GS < –3V, C GATE = 1nF (Note 5)
V GS > –1.5V, C GATE = 1nF (Note 6)
110
13
175
22
μ s
μ s
I S(OFF)
I S(SNK)
t S(ON)
t S(OFF)
STAT Off Current
STAT Sink Current
STAT Turn-On Time
STAT Turn-Off Time
2.5V ≤ V IN ≤ 28V (Note 7)
2.5V ≤ V IN ≤ 28V (Note 7)
(Note 8)
(Note 8)
–1
6
0
10
4.5
40
1
17
25
75
μ A
μ A
μ s
μ s
CTL Input
V IL
CTL Input Low Voltage
2.5V ≤ V IN ≤ 28V
0.5
0.35
V
V IH
CTL Input High Voltage
2.5V ≤ V IN ≤ 28V
0.9
0.635
V
I CTL
H CTL
CTL Input Pull-Down Current
CTL Hysteresis
0.35V ≤ V CTL ≤ 28V
2.5V ≤ V IN ≤ 28V
1
3.5
135
5.5
μ A
mV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4412E is guaranteed to meet performance specifications
from 0 ° C to 85 ° C operating temperature range. Specifications over the –
40 ° C to 85 ° C operating temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC4412IS6 is guaranteed over the – 40 ° C to 85 ° C operating temperature
range.
Note 3: This results in the same supply current as would be observed with
an external P-channel MOSFET connected to the LTC4412 and operating in
forward regulation.
Note 4: V IN is held at 12V and GATE is forced to 10.5V. SENSE is set at
12V to measure the source current at GATE. SENSE is set at 11.9V to
measure sink current at GATE.
Note 5: V IN is held at 12V and SENSE is stepped from 12.2V to 11.8V to
trigger the event. GATE voltage is initially V G(OFF) .
Note 6: V IN is held at 12V and SENSE is stepped from 11.8V to 12.2V to
trigger the event. GATE voltage is initially internally clamped at V G(ON) .
Note 7: STAT is forced to V IN – 1.5V. SENSE is set at V IN – 0.1V to
measure the off current at STAT. SENSE is set V IN + 0.1V to measure the
sink current at STAT.
Note 8: STAT is forced to 9V and V IN is held at 12V. SENSE is stepped
from 11.8V to 12.2V to measure the STAT turn-on time defined when I STAT
reaches one half the measured I S(SNK). SENSE is stepped from 12.2V to
11.8V to measure the STAT turn-off time defined when I STAT reaches one
half the measured I S(SNK) .
4412fa
3
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