参数资料
| 型号： | LTC4413EDD-1#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 14/16页 |
| 文件大小： | 0K |
| 描述： | IC IDEAL DIODE DUAL 10-DFN |
| 标准包装： | 121 |
| 应用： | 手持/移动设备 |
| FET 型： | P 沟道 |
| 输出数： | 2 |
| 内部开关： | 是 |
| 延迟时间 - 开启： | 11µs |
| 延迟时间 - 关闭： | 2µs |
| 电源电压： | 2.5 V ~ 5.5 V |
| 电流 - 电源： | 40µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 管件 |
LTC4413-1/LTC4413-2
APPLICATIONS INFORMATION
Soft-Start Overvoltage Protection
In the event that a low power external PFET is used for
the external overvoltage protection device, care must be
taken to limit the power dissipation in the external PFET.
The operation of this circuit is identical to the “Automatic
Switchover from a Battery to a Wall Adapter” application
shown on the ?rst page of this data sheet. Here, however,
the ideal diode from INA to INB is disabled by pulling up
on ENBA whenever an overvoltage condition is detected.
This channel is turned-off using a resistor connected to
OVP along with a 5.6V Zener diode, ensuring the abso-
lute maximum voltage at ENBA is not exceeded during
FDR8508
an overvoltage event. When the overvoltage condition
ends, the OVP voltage drops slowly, depending on the
gate charge of the external PFET. This causes the external
PFET to linger in a high R DS(ON) region where it can dis-
sipate a signi?cant amount of heat depending on the load
current. To avoid dissipating heat in the external PFET, this
application delays turning on the ideal diode from INA to
OUTA, until the gate voltage of the external PFET drops
below V ENBIL , where the external PFET should safely be
out of the high R DS(ON) region. This soft-start scheme can
be used on either channel of the LTC4413-2.
WALL
ADAPTER
INA
OUTA
INPUT
C2
10nF
C1
10μF
D1
OPTIONAL
IDEAL
V CC
0.1μF
1Ω
R ENBA
560k
D2
5.6V
ENBA STAT
LTC4413-2
GND OVI
R STAT
470k
STAT
ENBB
OVP
OVP
BAT
+
INB
IDEAL
OUTB
C OUT
4.7 μ F
TO LOAD
441312 F07
C1: C0805C106K8PAC
C2: C0403C103K8PAC
C OUT : C1206C475K8PAC
STAT IS HIGH WHEN WALL ADAPTER IS
SUPPLYING LOAD CURRENT
OVP IS HIGH WHEN WALL ADAPTER
VOLTAGE > 6V
Figure 7
441312fd
14
相关PDF资料 |
PDF描述 |
|---|---|
| LTC4413EDD#PBF | IC IDEAL DIODE DUAL 10-DFN |
| LTC4414EMS8#PBF | IC CNTRLR POWERPATH 8-MSOP |
| LTC4415EMSE#PBF | IC DUAL 4A DIODES 16-MSOP |
| LTC4416EMS#PBF | IC CTLR POWERPATH 10-MSOP |
| LTC5100EUF#TRPBF | IC DRIVER VCSEL 3.2GBPS 16QFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LTC4413EDD-2#PBF | 功能描述:IC IDEAL DIODE DUAL 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| LTC4413EDD-2#TRPBF | 功能描述:IC IDEAL DIODE DUAL 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| LTC4413EDD-2PBF | 制造商:Linear Technology 功能描述:Dual Ideal Diodes 2.6A 2.5-5.5V DFN10EP |
| LTC4413EDDPBF | 制造商:Linear Technology 功能描述:2-ch Ideal Diode OR Contr, LTC4413EDD |
| LTC4414EMS8 | 制造商:Linear Technology 功能描述:Power Controller 8-Pin MSOP |
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