- 您现在的位置：买卖IC网 > PDF目录180046 > LTR-5579DP1BINA (LITE-ON ELECTRONICS INC) PHOTO TRANSISTOR DETECTOR PDF资料下载
参数资料
| 型号： | LTR-5579DP1BINA |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 184K |
| 代理商： | LTR-5579DP1BINA |
LITE-ON TECHNOLOGY CORPORATION
Property of Lite- O n Only
ELECTRICAL OPTICAL CHARACTERISTICS AT TA=25℃
℃
PARAMETER
SYMBOL
MIN.
TYP.
MAX
UNIT
TEST
CONDITION
BIN No.
Color
Marking
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
V
Ic = 1mA
Ee = 0mW/c㎡
Emitter-Collector
Breakdown Voltage
V(BR)ECO
5
V
IE = 100μA
Ee = 0mW/c㎡
Collector Emitter
Saturation Voltage
VCE(SAT)
0.1
0.4
V
Ic = 50μA
Ee = 1.0mW/c㎡
Rise Time
Tr
15
μs
Fall Time
Tf
18
μs
Vcc = 5V
Ic = 1mA
RL = 1KΩ
Collector Dark Current
ICEO
0.1
100
nA
VCE = 10V
Ee = 0mW/c㎡
On Stage Collector Current Ratio
(IL1/IL2)
R
0.8
1.0
1.2
100
200
BIN A
Red
200
300
BIN B
Black
300
400
BIN C
Green
Average On State Collector
Current Range Setting of
LITE-ON Production (IL1+IL2) / 2
IC(ON)
400
500
μA
VCE = 5V
Ee = 1mW/c㎡
BIN D
Blue
80
240
BIN A
Red
160
360
BIN B
Black
240
480
BIN C
Green
Average On State Collector
Current Range Q.C Limits
(IL1+IL2) / 2
IC(ON)
320
600
μA
VCE = 5V
Ee = 1mW/c㎡
BIN D
Blue
On State Collector Current Test Method
Notes: 1. IR source package face to DUT lead frame.
2. IR source bias level calibrated for 1mW/c㎡ at DUT.
3. IL shown is one of two emitter currents, IL1 and IL2.
Part No. : LTR-5579DP1 DATA SHEET
Page :
3
of
4
BNS-OD-C131/A4
相关PDF资料 |
PDF描述 |
|---|---|
| LTR-5677DL3BINF | PHOTO TRANSISTOR DETECTOR |
| LTR-5677DL3BINI | PHOTO TRANSISTOR DETECTOR |
| LTS0410-2001 | WIRE TERMINAL |
| LTS0410-4001 | WIRE TERMINAL |
| LTS0420-3002 | WIRE TERMINAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LTR-5888DH | 功能描述:光电晶体管 Phototrans Filtered TBIT RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| LTR-5986D | 功能描述:光电晶体管 Phototransistor PTX, TBIT,. 157" HT RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| LTR-5986H | 功能描述:光电晶体管 Phototransistor PTX, TBIT,. 157" HT RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| LTR-743DBM1-TA | 功能描述:光电二极管 Phototransistor PTX TBIT. 15" HT T/R RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
| LTR74S3804R | 制造商:LED TECHNOLOGY 功能描述:LED BACKLIGHT PANEL 制造商:LED TECHNOLOGY 功能描述:LED BACKLIGHT PANEL; LED Color:4 Red; Forward Voltage:3.4V; Forward Current If:20mA; No. of LEDs:4 ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。