参数资料
| 型号： | LV51130T-TLM-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | IC BATT PROTECTION LI-ION 8MSOP |
| 标准包装： | 2,000 |
| 功能： | 电池保护 |
| 电池化学： | 锂离子（Li-Ion） |
| 电源电压： | 1.5 V ~ 10 V |
| 工作温度： | -30°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
LV51130T
Excessive charger detection/release
If the voltage between V- pin and VSS pin becomes equal to or less than the excessive charger detection voltage by
connecting a charger, no charging can be made by turning the Cout pin “L” after delay time and turning off the
external Nch MOS FET. If that voltage returns to equal to or more than the excessive charger detection voltage
during detection delay time, the excessive charger detection will be stopped. If the voltage between V- pin and VSS
pin becomes equal to or more than the excessive charger detection voltage after excessive charger detection, the Cout
returns to “H” after delay time. The detection/return delay time is set internally.
If Dout pin is “L”, charging will be made through the parasitic diode of external Nch FET on Dout pin. In that case,
the voltage between V- pin and VSS pin is nearly -Vf which is less than the excessive-charger detection voltage,
therefore no excessive charger detection will be made during over-discharge, over-current and short-circuit detection.
Furthermore, if excessive voltage charger is connected to the over-discharged battery, no excessive charger detection
is made while the Dout pin is “L”. But the battery is continued charging through the parasitic diode. If the battery
voltage rises to the over-discharge detection voltage and the voltage between V- pin and VSS pin remains equal to or
less than the excessive charger detection voltage, the delay operation will be started after Dout pin turns to “H.”
0V cell charging operation
If voltage between VDD and V becomes equal to or more than the 0V cell charging lowest operation voltage when
the cell voltage is 0V, the Cout pin turns to “H” and charging is enabled.
Shorten the test time
By turning T pin to the VDD , the delay times set by the internal counter can be cut. If T pin is “open”, “L” the delay
times are normal. Delay time not set by the counter just like as short circuit detection delay cannot be controlled by
this pin.
In some circuit-board layout, an excessive current at the load short might cause this IC be in miss operation like as in
standby mode due to VSS line impedance. Therefore we recommend that the T pin is connected to the VSS pin.
Operation in case of detection overlap
Overlap state
Operation in case of
detection overlap
State after detection
During over-charge
detection
Over-discharge
detection is made
Over-charge detection is preferred. If over-
discharge state continues even after over-
charge detection, over-discharge detection is
resumed.
When over-charge state is made first, V- is
released. When over-discharge is detected after
over-charge state is made, the IC does not go
into the stand-by mode. Note that V- is
connected to VDD via 200k ? .
Over-current
detection is made
(*1) Both detections can be made in parallel.
Over-charge detection continues even when the
over-current state is made first. If the over-
charge state is made first, over-current detection
is interrupted.
(*2) When over-current state is made first, V- is
connected to VSS via 30k ? . When over-charge
state is made first, V- is released.
During over-discharge
detection
Over-charge detection
is made
Over-discharge detection is interrupted and
over-charge detection is preferred. When over-
discharge state continues even after over-
charge state is made, over-discharge detection
The IC does not go into the stand-by mode
when over-discharge state is made after over-
charge detection. Note that V- is connected to
VDD via 200k ? .
is resumed.
Over-current
detection is made
(*3) Both detections can be made in parallel.
Over-discharge detection continues even when
the over-current state is made first. But over-
current detection is interrupted when the over-
discharge state is made first.
(*4) If over-current state is made first, V- will be
connected to VSS via 30k ? . If over-discharge
detection is made next, V- will be disconnected
from VSS and connected to VDD via 200k ? to
get into stand-by mode. If over-discharge state
is made first, V- will be connected to VDD via
200k ? to get into standby state.
During over-current
detection
Over-charge detection
is made
Over-discharge
(*1)
(*3)
(*2)
(*4)
detection is made
(Note) Short-circuit detection can be made independently.
Excessive charger detection cannot be made during over-discharge, over-current and short-circuit detection.
And its delay time starts after the Dout pin returns to “H”.
No.A1227-6/8
相关PDF资料 |
PDF描述 |
|---|---|
| LV51131T-TLM-E | IC BATT PROTECTION LI-ION 8MSOP |
| LV51132T-TLM-E | IC BATT PROTECTION LI-ION 8MSOP |
| LV51133T-TLM-E | IC BATT PROTECTION LI-ION 8MSOP |
| LV51135T-TLM-E | IC BATT PROTECTION LI-ION 8MSOP |
| LV51136T-TLM-E | IC BATT PROTECTION LI-ION 8MSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LV51131T | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:2-Cell Lithium-Ion Secondary Battery Protection IC |
| LV51131T_11 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:2-Cell Lithium-Ion Secondary Battery Protection IC |
| LV51131T-TLM-E | 功能描述:电池管理 BATTERY PROTECTION IC RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| LV51132T | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:2-Cell Lithium-Ion Secondary Battery Protection IC |
| LV51132T-TLM-E | 功能描述:电池管理 BATTERY PROTECTION IC RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
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