参数资料
型号: LX1681CDM
元件分类: 稳压器
英文描述: 1 A SWITCHING CONTROLLER, 230 kHz SWITCHING FREQ-MAX, PDSO8
封装: PLASTIC, SOIC-8
文件页数: 8/9页
文件大小: 145K
代理商: LX1681CDM
V O L T AGE -M ODE PWM C ONTROLLERS
LX1681/1682
PRODUCT DA T ABOOK 1996/1997
Copyright 1999
Rev. 1.0 5/99
8
P RODUCTION D AT A S HEET
APPLICA TION INFORMA TION
FET SELECTION (continued)
Synchronous Rectification – Lower MOSFET
The lower pass element can be either a MOSFET or a Schottky
diode. The use of a MOSFET (synchronous rectification) will result
in higher efficiency, but at higher cost than using a Schottky diode
(non-synchronous).
Power dissipated in the bottom MOSFET will be:
P
D = I
2 * R
DS(ON) * [1 - Duty Cycle] = 3.51W
[IRL3303 or 1.76W for the IRL3102]
Non-Synchronous Operation - Schottky Diode
A typical Schottky diode, with a forward drop of 0.6V will dissipate
0.6 * 15 * [1 – 2/5] = 5.4W (compared to the 1.8 to 3.5W dissipated
by a MOSFET under the same conditions).
This power loss becomes much more significant at lower duty
cycles. The use of a dual Schottky diode in a single TO-220
package (e.g. the MBR2535) helps improve thermal dissipation.
Operation From A Single Power Supply
The LX1681/1682 needs a secondary supply voltage (V
C1) to
provide sufficient drive to the upper MOSFET. In many applica-
tions with a 5V (V
CC) and a 12V (VC1) supply are present.
In
situations where only 5V is present, V
C1 can be generated using
a bootstrap (charge pump) circuit, as shown in Figure 4 (Typical
Applications section).
The capacitor (C
4) is alternatively charged up from VCC via the
Schottky diode (D
2), and then boosted up when the FET is turned
on. This scheme provedes a V
C1 voltage equal to 2 * VCC - VDS(D2),
or approximately 9.5V with V
CC = 5V.
This voltage will provide
sufficient gate drive to the external MOSFET in order to get a low
R
DS(ON).
Note that using the bootstrap circuit in synchronous
rectification mode is likely to result in faster turn-on than in non-
synchronous mode.
LAYOUT GUIDELINES - THERMAL DESIGN
A great deal of time and effort were spent optimizing the thermal
design of the demonstration boards. Any user who intends to
implement an embedded motherboard would be well advised to
carefully read and follow these guidelines. If the FET switches
have been carefully selected, external heatsinking is generally not
required. However, this means that copper trace on the PC board
must now be used. This is a potential trouble spot; as much
copper area as possible must be dedicated to heatsinking the FET
switches, and the diode as well if a non-synchronous solution is
used.
In our VRM module, heatsink area was taken from internal
ground and V
CC planes which were actually split and connected
with VIAS to the power device tabs. The TO-220 and TO-263
cases are well suited for this application, and are the preferred
packages. Remember to remove any conformal coating from all
exposed PC traces which are involved in heatsinking.
FIGURE 2 — Enabling Linear Regulator
Output
5V Input
LX168x
GND
General Notes
As always, be sure to provide local capacitive decoupling close to
the chip. Be sure use ground plane construction for all high-
frequency work. Use low ESR capacitors where justified, but be
alert for damping and ringing problems. High-frequency designs
demand careful routing and layout, and may require several
iterations to achieve desired performance levels.
Power Traces
To reduce power losses due to ohmic resistance, careful consid-
eration should be given to the layout of traces that carry high
currents. The main paths to consider are:
s Input power from 5V supply to drain of top MOSFET.
s Trace between top MOSFET and lower MOSFET or Schottky
diode.
s Trace between lower MOSFET or Schottky diode and ground.
s Trace between source of top MOSFET and inductor and load.
All of these traces should be made as wide and thick as possible,
in order to minimize resistance and hence power losses. It is also
recommended that, whenever possible, the ground, input and
output power signals should be on separate planes (PCB layers).
See Figure 2 – bold traces are power traces.
Layout Assistance
Please contact Linfinity’s Applications Engineers for assistance
with any layout or component selection issues. A Gerber file with
layout for the most popular devices is available upon request.
Evaluation boards are also available upon request. Please
check Linfinity's web site for further application notes.
相关PDF资料
PDF描述
LX1682CDMT 1 A SWITCHING CONTROLLER, 230 kHz SWITCHING FREQ-MAX, PDSO8
LX1682CDM 1 A SWITCHING CONTROLLER, 230 kHz SWITCHING FREQ-MAX, PDSO8
LX1681CDMT 1 A SWITCHING CONTROLLER, 230 kHz SWITCHING FREQ-MAX, PDSO8
LX1734-CSET 1 A SWITCHING CONTROLLER, 1400 kHz SWITCHING FREQ-MAX, PDSO5
LX432CSCTR 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.24 V, PDSO3
相关代理商/技术参数
参数描述
LX1681CDMT 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Voltage-Mode SMPS Controller
LX1681CDM-TR 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Voltage-Mode PWM Controllers
LX1681IDM 功能描述:IC REG CTRLR DIVIDER PWM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR)
LX1682 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:VOLTAGE - MODE PWM CONTROLLERS
LX1682CDM 功能描述:IC REG CTRLR DIVIDER PWM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR)