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参数资料
| 型号： | M100B/23 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 26K |
| 代理商： | M100B/23 |
M100A thru M100M
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88659
2
08-Jul-02
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
100
75
125
150
175
0
0.4
0.6
0.8
0.2
1.0
1.2
1
10
100
10
20
30
40
50
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
100
1
0.1
0.01
1
0.1
10
100
10
1
100
0
20
40
60
80
100
0.01
0.1
1
10
100
1,000
Average
Forward
Rectified
Current
(A)
Peak
Forward
Surge
Current
(A)
Fig 3 – Typical Instantaneous Forward
Characteristics
Fig 2 – Maximum Non-repetitive Peak
Forward Surge Current
Fig 4 – Typical Reverse Characteristics
Fig 5 – Typical Junction Capacitance
TJ = 25C
f = 1.0 MHz
Vsig = 50mVp-p
Instantaneous
Forward
Current
(A)
Junction
Capacitance
(pF)
Ambient Temperature,
°C
Number of Cycles at 60Hz
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
60 Hz
Resistive or
Inductive Load
TA = 75°C
8.3ms Single Half Sine-wave
(JEDEC Method)
0
Pulse width = 300
s
1% Duty Cycle
Fig 1 – Forward Current Derating Curve
Instantaneous
Reverse
Current
(
A)
TJ = 150°C
TJ = 25°C
Fig. 6 – Typical Transient Thermal
Impedance
0.01
0.1
1
10
100
t -- Pulse Duration (sec)
0.1
10
100
1
T
ransient
Thermal
Impedance
(
°C/W)
TJ = 25°C
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pads
0.375" (9.5mm) Lead Length
Percentage of Peak Reverse Voltage (%)
相关PDF资料 |
PDF描述 |
|---|---|
| M100G/4 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| M100M/1 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL |
| M100A/1 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL |
| M100J/23 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| M100M/23 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL |
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