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参数资料
| 型号： | M100B |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 290K |
| 代理商： | M100B |
www.vishay.com
2
Document Number 88659
30-Aug-05
M100A thru M100M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
M100A
M100B
M100D
M100G
M100J
M100K
M100M
Unit
Maximum
instantaneous forward
voltage
at 1.0 A
VF
1.0
1.1
V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 100 °C
IR
1.0
50
A
Typical reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
s
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
15
pF
Parameter
Symbol
M100A
M100B
M100D
M100G
M100J
M100K
M100M
Unit
Typical thermal resistance(1)
RθJA
RθJL
50
25
°C/W
Figure 1. Forward Current Derating Curve
0
25
50
100
75
125
150
60 Hz
Resistiveor
Inductive Load
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pads
0.375" (9.5 mm) Lead Length
Ambient Temperature, °C
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
1
10
100
10
20
30
40
50
0
TA = 75 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
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