参数资料
型号: M1MA141WKT3
厂商: MOTOROLA INC
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 2 ELEMENT, SILICON, SIGNAL DIODE
文件页数: 1/6页
文件大小: 99K
代理商: M1MA141WKT3
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in
ultra high speed switching applications. This device is housed in the SC–70 package
which is designed for low power surface mount applications.
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA141/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA141/2WKT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA141WKT1
VR
40
Vdc
M1MA142WKT1
80
Peak Reverse Voltage
M1MA141WKT1
VRM
40
Vdc
M1MA142WKT1
80
Forward Current
Single
IF
100
mAdc
Dual
150
Peak Forward Current
Single
IFM
225
mAdc
Dual
340
Peak Forward Surge Current
Single
IFSM(1)
500
mAdc
Dual
FSM
750
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
– 55 ~ + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
M1MA141WKT1
IR
VR = 35 V
0.1
Adc
M1MA142WKT1
VR = 75 V
0.1
Forward Voltage
VF
IF = 100 mA
1.2
Vdc
Reverse Breakdown Voltage
M1MA141WKT1
VR
IR = 100 A
40
Vdc
M1MA142WKT1
80
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
2.0
pF
Reverse Recovery Time
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
3.0
ns
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by M1MA141WKT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
M1MA141WKT1
M1MA142WKT1
SC–70/SOT–323 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODE
40/80 V–100 mA
SURFACE MOUNT
CASE 419–02, STYLE 5
SC–70/SOT–323
Motorola Preferred Devices
1
2
3
Motorola, Inc. 1996
CATHODE
3
12
ANODE
REV 2
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相关代理商/技术参数
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