参数资料
型号: M1MA151KT3
厂商: MOTOROLA INC
元件分类: 参考电压二极管
英文描述: 0.1 A, 40 V, SILICON, SIGNAL DIODE
封装: SC-59, 3 PIN
文件页数: 1/8页
文件大小: 103K
代理商: M1MA151KT3
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed
switching applications. These devices are housed in the SC–59 package which is
designed for low power surface mount applications.
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA151KT1
VR
40
Vdc
M1MA152KT1
80
Peak Reverse Voltage
M1MA151KT1
VRM
40
Vdc
M1MA152KT1
80
Forward Current
IF
100
mAdc
Peak Forward Current
IFM
225
mAdc
Peak Forward Surge Current
IFSM(1)
500
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
– 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
M1MA151KT1
IR
VR = 35 V
0.1
Adc
M1MA152KT1
VR = 75 V
0.1
Forward Voltage
VF
IF = 100 mA
1.2
Vdc
Reverse Breakdown Voltage
M1MA151KT1
VR
IR = 100 A
40
Vdc
M1MA152KT1
80
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
2.0
pF
Reverse Recovery Time
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
3.0
ns
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by M1MA151KT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
M1MA151KT1
M1MA152KT1
SC–59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
Motorola Preferred Devices
CASE 318D–03, STYLE 2
SC–59
2
1
3
Motorola, Inc. 1996
CATHODE
3
2
ANODE
1
NO CONNECTION
REV 3
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