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参数资料
| 型号： | M1MA152WAT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 91K |
| 描述： | DIODE SWITCH DUAL CA 80V SC59 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 3,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.2V @ 100mA |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 75V |
| 电流 - 平均整流 (Io)（每个二极管）： | 100mA（DC） |
| 电压 - (Vr)（最大）： | 80V |
| 反向恢复时间(trr)： | 10ns |
| 二极管类型： | 标准 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 1 对共阳极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SC-59 |
| 包装： | 带卷 (TR) |
| 其它名称： | M1MA152WAT1OS |
?
Semiconductor Components Industries, LLC, 2012
July, 2012 ?
Rev. 10
1
Publication Order Number:
M1MA151WAT1/D
M1MA151WAT1,
M1MA152WAT1
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC?59 package which is designed for low
power surface mount applications.
Features
?
Fast trr, < 10 ns
?
Low CD, < 15 pF
?
Pb?Free Packages are Available
MAXIMUM RATINGS (TA
= 25
°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA151WAT1
M1MA152WAT1
VR
40
80
Vdc
Peak Reverse Voltage
M1MA151WAT1
M1MA152WAT1
VRM
40
80
Vdc
Forward Current
Single
Dual
IF
100
150
mAdc
Peak Forward Current
Single
Dual
IFM
225
340
mAdc
Peak Forward Surge Current
Single
Dual
I
(Note 1)
FSM
500
750
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
SC?59
CASE 318D
MARKING DIAGRAM
3 ANODE
12CATHODE
Device Package Shipping?
ORDERING INFORMATION
M1MA151WAT1 SC?59 3000/Tape & Reel
M1MA151WAT1G SC?59
(Pb?Free)
3000/Tape & Reel
M1MA152WAT1 SC?59 3000/Tape & Reel
M1MA152WAT1G SC?59
(Pb?Free)
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Mx M
Mx = Device Code
x = N for 151
O for 152
M = Date Code*
=Pb?Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M1MA152WAT1G | 功能描述:二极管 - 通用，功率，开关 80V 100mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| M1MA152WK | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Surface Mount Switching Diode |
| M1MA152WKLT1 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA152WKLT1G | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA152WKT1 | 功能描述:二极管 - 通用，功率，开关 80V 100mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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