参数资料
型号: M25P16-VMF3G
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 44/55页
文件大小: 335K
代理商: M25P16-VMF3G
DC and AC parameters
M25P16
44/55
Figure 23.
Serial input timing
t
SE(6)
t
BE(6)
Sector Erase cycle time
0.8
3
s
Bulk Erase cycle time
17
40
s
1.
Preliminary data.
2.
t
CH
+ t
CL
must be greater than or equal to 1/ f
C
Value guaranteed by characterization, not 100% tested in production.
3.
4.
Expressed as a slew-rate.
5.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
6.
Typical values given for T
A
= 85 °C.
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
7.
Table 17.
AC characteristics (25 MHz operation, Grade 3)
(1)
(continued)
Test conditions specified in
Table 10
and
Table 12
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
C
D
AI01447C
S
MSB IN
Q
tDVCH
High Impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSH
tCHSL
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