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参数资料
| 型号： | M25P16-VMN3P |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 41/55页 |
| 文件大小： | 335K |
| 代理商： | M25P16-VMN3P |
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M25P16
DC and AC parameters
41/55
Table 16.
AC characteristics (Grade 6,
T9HX (0.11μm) technology
)
(1)
Applies only to products made with T9HX (0.11μm) Technology, identified with Process digit
“4”
(2)
Test conditions specified in
Table 10
and
Table 12
Symbol Alt.
Parameter
Min.
Typ.
(3)
Max.
Unit
f
C
f
C
Clock Frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDID, RDSR, WRSR
D.C.
50
MHz
f
R
Clock Frequency for READ instructions
D.C.
33
MHz
t
CH(4)
t
CL(3)
t
CLCH(5)
t
CHCL(5)
t
CLH
Clock High Time
9
ns
t
CLL
Clock Low Time
Clock Rise Time
(6)
(peak to peak)
9
ns
0.1
V/ns
Clock Fall Time
(6)
(peak to peak)
0.1
V/ns
t
SLCH
t
CSS
S Active Setup Time (relative to C)
5
ns
t
CHSL
S Not Active Hold Time (relative to C)
5
ns
t
DVCH
t
DSU
Data In Setup Time
2
ns
t
CHDX
t
DH
Data In Hold Time
5
ns
t
CHSH
S Active Hold Time (relative to C)
5
ns
t
SHCH
S Not Active Setup Time (relative to C)
5
ns
t
SHSL
t
SHQZ(5)
t
CSH
S Deselect Time
100
ns
t
DIS
Output Disable Time
8
ns
t
CLQV
t
V
Clock Low to Output Valid
8
ns
t
CLQX
t
HO
Output Hold Time
0
ns
t
HLCH
HOLD Setup Time (relative to C)
5
ns
t
CHHH
HOLD Hold Time (relative to C)
5
ns
t
HHCH
HOLD Setup Time (relative to C)
5
ns
t
CHHL
t
HHQX(5)
t
HLQZ(5)
t
WHSL(7)
t
SHWL(7)
t
DP(5)
HOLD Hold Time (relative to C)
5
ns
t
LZ
HOLD to Output Low-Z
8
ns
t
HZ
HOLD to Output High-Z
8
ns
Write Protect Setup Time
20
ns
Write Protect Hold Time
100
ns
S High to Deep Power-down Mode
3
μs
t
RES1(5)
S High to Standby Mode without Electronic
Signature Read
30
μs
t
RES2(5)
S High to Standby Mode with Electronic
Signature Read
30
μs
t
W
Write Status Register Cycle Time
1.3
15
ms
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PDF描述 |
|---|---|
| M25P16-VMN3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P16-VMN3PB | 制造商:Micron Technology Inc 功能描述:Flash Mem Serial-SPI 3.3V 16M-Bit 2M x 8 15ns 8-Pin SO N Tray 制造商:Micron Technology Inc 功能描述:16 MBIT, SERIAL FLASH MEMORY, 75 MHZ SPI BUS INTERFACE - Trays 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 16Mbit 2M x 8bit 15ns 8-Pin SO N Tray 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 75MHZ 8SO |
| M25P16VMN3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VMN3T | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16VMN3TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VMN3TG | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
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