参数资料
型号: M25P16-VMN6TP
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 37/55页
文件大小: 335K
代理商: M25P16-VMN6TP
M25P16
Initial delivery state
37/55
8
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
9
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings" table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 9.
Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead temperature during soldering
see
(1)
1.
Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU.
JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
, R2=500
).
°C
V
IO
Input and Output Voltage (with respect to Ground)
–0.6
V
CC
+ 0.6
V
V
CC
Supply Voltage
–0.6
4.0
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
2.
–2000
2000
V
相关PDF资料
PDF描述
M25P16-VMN3P 4 Mbit Uniform Sector, Serial Flash Memory
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