参数资料
型号: M25P16-VMP3TG
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 36/55页
文件大小: 335K
代理商: M25P16-VMP3TG
Power-up and Power-down
M25P16
36/55
Figure 21.
Power-up timing
Table 8.
1.
These parameters are characterized only.
Power-Up timing and VWI threshold
Symbol
Parameter
Min.
Max.
Unit
t
VSL(1)
t
PUW(1)
V
WI(1)
V
CC
(min) to S Low
30
μs
Time delay to Write instruction
1
10
ms
Write Inhibit Voltage
1.5
2.5
V
VCC
AI04009C
VCC(min)
VWI
Reset State
of the
Device
Chip Selection Not Allowed
Program, Erase and Write Commands are Rejected by the Device
tVSL
tPUW
time
Read Access allowed
Device fully
accessible
VCC(max)
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