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参数资料
| 型号： | M25P16-VMW3P |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 31/55页 |
| 文件大小： | 335K |
| 代理商： | M25P16-VMW3P |
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M25P16
Instructions
31/55
6.10
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Figure 17
.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is t
BE
) is initiated. While the
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are
0. The Bulk Erase (BE) instruction is ignored if one, or more, sectors are protected.
Figure 17.
Bulk Erase (BE) instruction sequence
C
D
AI03752D
S
2
1
3
4
5
6
7
0
Instruction
相关PDF资料 |
PDF描述 |
|---|---|
| M25P16-VMW3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMW3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMW6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMW6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMW6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P16-VMW3T | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16-VMW3TG | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16-VMW3TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16-VMW6 | 制造商:Micron Technology Inc 功能描述:16 MBIT, SERIAL FLASH MEMORY, 75 MHZ SPI BUS INTERFACE - Bulk |
| M25P16-VMW6G | 功能描述:闪存 16MBIT SFLASH MEM RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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