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参数资料
| 型号： | M25P20VMP6T |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 13/34页 |
| 文件大小： | 217K |
| 代理商： | M25P20VMP6T |
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M25P05-A
Table 6. Protection Modes
Note: 1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 2.
The protection features of the device are summa-
rized in Table 6.
When the Status Register Write Disable (SRWD)
bit of the Status Register is 0 (its initial delivery
state), it is possible to write to the Status Register
provided that the Write Enable Latch (WEL) bit has
previously been set by a Write Enable (WREN) in-
struction, regardless of the whether Write Protect
(W) is driven High or Low.
When the Status Register Write Disable (SRWD)
bit of the Status Register is set to 1, two cases
need to be considered, depending on the state of
Write Protect (W):
– If Write Protect (W) is driven High, it is possible
to write to the Status Register provided that the
Write Enable Latch (WEL) bit has previously
been set by a Write Enable (WREN) instruction.
– If Write Protect (W) is driven Low, it is
not
pos-
sible to write to the Status Register
even
if the
Write Enable Latch (WEL) bit has previously
been set by a Write Enable (WREN) instruction.
(Attempts to write to the Status Register are re-
jected, and are not accepted for execution). As
a consequence, all the data bytes in the memo-
ry area that are software protected (SPM) by the
Block Protect (BP1, BP0) bits of the Status Reg-
ister, are also hardware protected against data
modification.
Regardless of the order of the two events, the
Hardware Protected Mode (HPM) can be entered:
– by setting the Status Register Write Disable
(SRWD) bit after driving Write Protect (W) Low
– or by driving Write Protect (W) Low after setting
the Status Register Write Disable (SRWD) bit.
The only way to exit the Hardware Protected Mode
(HPM) once entered is to pull Write Protect (W)
High.
If Write Protect (W) is permanently tied High, the
Hardware Protected Mode (HPM) can never be
activated, and only the Software Protected Mode
(SPM), using the Block Protect (BP1, BP0) bits of
the Status Register, can be used.
W
Signal
SRWD
Bit
Mode
Write Protection of the
Status Register
Memory Content
Protected Area
1
Unprotected Area
1
1
0
Software
Protected
(SPM)
Status Register is
Writable (if the WREN
instruction has set the
WEL bit)
The values in the SRWD,
BP1 and BP0 bits can be
changed
Protected against Page
Program, Sector Erase
and Bulk Erase
Ready to accept Page
Program and Sector
Erase instructions
0
0
1
1
0
1
Hardware
Protected
(HPM)
Status Register is
Hardware write protected
The values in the SRWD
BP1 and BP0 bits cannot
be changed
Protected against Page
Program, Sector Erase
and Bulk Erase
Ready to accept Page
Program and Sector
Erase instructions
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P20-VMP6T | 功能描述:闪存 Lo-Volt 2M (256Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P20VMP6TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P20-VMP6TG | 功能描述:闪存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P20-VMP6TG/X | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface |
| M25P20-VMP6TGB | 功能描述:IC FLASH 2MBIT 75MHZ 8VFQFPN RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
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