参数资料
型号: M25P32-VME6TP
厂商: 意法半导体
元件分类: FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 26/39页
文件大小: 506K
代理商: M25P32-VME6TP
M25P32
32/39
Note: 1. tCH + tCL must be greater than or equal to 1/ fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
tSHQZ
2
tDIS
Output Disable Time
8
ns
tCLQV
tV
Clock Low to Output Valid
8
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
5
ns
tCHHH
HOLD Hold Time (relative to C)
5
ns
tHHCH
HOLD Setup Time (relative to C)
5
ns
tCHHL
HOLD Hold Time (relative to C)
5
ns
tHHQX
2
tLZ
HOLD to Output Low-Z
8
ns
tHLQZ
2
tHZ
HOLD to Output High-Z
8
ns
tWHSL
4
Write Protect Setup Time
20
ns
tSHWL
4
Write Protect Hold Time
100
ns
tDP
2
S High to Deep Power-down Mode
3
s
tRES1
2
S High to Standby Power mode without
Electronic Signature Read
30
s
tRES2
2
S High to Standby Power mode with Electronic
Signature Read
30
s
tW
Write Status Register Cycle Time
5
15
ms
tPP
Page Program Cycle Time
1.4
5
ms
tSE
Sector Erase Cycle Time
1
3
s
tBE
Bulk Erase Cycle Time
34
80
s
Test conditions specified in Table 10. and Table 11.
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
相关PDF资料
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