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参数资料
| 型号： | M25P40VMN6T |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 24/34页 |
| 文件大小： | 217K |
| 代理商： | M25P40VMN6T |
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M25P05-A
24/34
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 8. Absolute Maximum Ratings
Note: 1. IPC/JEDEC J-STD-020A
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
, R2=500
)
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead Temperature during Soldering
(20 seconds max.)
1
SO
235
°C
VFQFPN
235
°C
V
IO
Input and Output Voltage (with respect to Ground)
–0.6
4.0
V
V
CC
Supply Voltage
–0.6
4.0
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2
–2000
2000
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P40-VMN6T | 功能描述:闪存 3.0V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P40VMN6TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN6TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface |
| M25P40-VMN6TG/X | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40VMN6TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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