参数资料
型号: M25PE20_07
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 43/60页
文件大小: 310K
代理商: M25PE20_07
M25PE20, M25PE10
Instructions
43/60
6.17
Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. Executing this instruction
takes the device out of the Deep Power-down mode.
The Release from Deep Power-down (RDP) instruction is entered by driving Chip Select (S)
Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be
driven Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 24
.
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select
(S) High. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven
Low, cause the instruction to be rejected, and not executed.
After Chip Select (S) has been driven High, followed by a delay, t
RDP
, the device is put in
Standby Power mode. Chip Select (S) must remain High at least until this period is over. The
device waits to be selected, so that it can receive, decode and execute instructions.
Any Release from Deep Power-down (RDP) instruction, while an Erase, Program or Write
cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 24.
Release from Deep Power-down (RDP) instruction sequence
C
D
AI06807
S
2
1
3
4
5
6
7
0
t
RDP
Standby Power Mode
Deep Power-down Mode
Q
High Impedance
Instruction
相关PDF资料
PDF描述
M25PE20-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
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M25PE20-VMN6P_NUD 制造商:Micron Technology Inc 功能描述:
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