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参数资料
| 型号： | M27C1024-10N3X |
| 厂商： | 意法半导体 |
| 英文描述： | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| 中文描述： | 1兆位64Kb的x16紫外线EPROM和检察官办公室存储器 |
| 文件页数： | 15/15页 |
| 文件大小： | 102K |
| 代理商： | M27C1024-10N3X |
AI00707C
n= 0
Last
Addr
VERIFY
P = 100
s Pulse
++n
=25
++ Addr
VCC = 6.25V, VPP = 12.75V
FAIL
CHECK ALL WORDS
1st: VCC =6V
2nd: VCC = 4.2V
YES
NO
YES
NO
YES
NO
Figure 7. Programming Flowchart
Program Inhibit
Programming of multiple M27C1024s in parallel
with different data is also easily accomplished.
Except for E, all like inputs including G of the
parallel M27C1024 may be common. A TTL low
level pulse applied to a M27C1024’s P input, with
E low and VPP at 12.75V, will program that
M27C1024. A high level E input inhibits the other
M27C1024s from being programmed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correctly
programmed. The verify is accomplished with E
and G at VIL, P at VIH,VPP at 12.75V and VCC at
6.25V.
On-Board Programming
The M27C1024 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its correspondingprogramming algorithm. The
ES mode is functional in the 25
°C ± 5°C ambient
temperature range that is required when program-
ming the M27C1024. To activate the ES mode, the
programming equipmentmust force 11.5V to 12.5V
on address line A9 of the M27C1024 with VPP =
VCC = 5V. Two identifier bytes may then be se-
quenced from the device outputs by toggling ad-
dress line A0 from VIL to VIH. All otheraddress lines
must be held at VIL during Electronic Signature
mode. Byte 0 (A0=VIL) represents the manufac-
turer code and byte 1 (A0=VIH) the device identifier
code. For the STMicroelectronics M27C1024 ,
these two iden-tifier bytes are given in Table 4 and
can be read-out on outputs Q0 to Q7.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C1024 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It shouldbe noted that sunlight
and some type of fluorescent lamps have wave-
lengthsin the 3000-4000 range. Research shows
that constant exposure to room level fluorescent
lighting could erase a typical M27C1024 in about 3
years, while it would take approximately 1 week to
cause erasure when exposed to direct sunlight. If
the M27C1024 is to be exposed to these types of
lighting conditions for extended periods of time, it
is suggested that opaque labels be put over the
M27C1024 window to prevent unintentional era-
sure. The recommended erasure procedurefor the
M27C1024 is exposure to short wave ultraviolet
light which has wavelength 2537 . The integrated
dose (i.e. UV intensity x exposuretime) for erasure
should be a minimum of 15 W-sec/cm2. The era-
sure time with this dosage is approximately 15 to
20 minutes using an ultraviolet lamp with
12000
W/cm2 power rating. The M27C1024
should be placed within 2.5 cm (1 inch) of the lamp
tubes during the erasure. Some lamps have a filter
on their tubes which should be removed before
erasure.
9/15
M27C1024
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相关代理商/技术参数 |
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| M27C1024-10N6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| M27C1024-10N6X | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit (64Kb x16) UV EPROM and OTP EPROM |
| M27C1024-10N7TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| M27C1024-10N7X | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| M27C1024-10XB1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
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